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Presentation |
2015-12-21 14:35
Detector Characteristics of GaAsSb-based Backward Diode Monolithically Integrated with InP-based HEMTs for 300 GHz Receiver Applications Tsuyoshi Takahashi, Masaru Sato, Shoichi Shiba, Kozo Makiyama, Yasuhiro Nakasha, Naoki Hara (Fujitsu Labs.) |
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ED2015-94 Link to ES Tech. Rep. Archives: ED2015-94 |
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