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| Presentation | 2017-01-27 14:50 30W Output/60% PAE GaN Power Amplifier at X-band 8% Relative Bandwidth Utilizing 0.15um GaN HEMT Technology Yoshifumi Kawamura, Masatake Hangai, Tomohiro Mizutani, Kenichi Tomiyama, Koji Yamanaka (Mitsubishi Electric) |
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| PDF Download Link |  ED2016-111 MW2016-187 Link to ES Tech. Rep. Archives: ED2016-111 MW2016-187 |
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