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| Presentation | 2023-01-27 12:50 Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters -- Device Simulation Study -- Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) |
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| PDF Download Link |  ED2022-91 MW2022-150 |
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