Print edition: ISSN 0913-5685
Online edition: ISSN 2432-6380
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ED2005-199
Analysis of Slow Current Transients and Current Collapse in GaN FETs
Hiroki Takayanagi, Keiichi Itagaki, Hiroyuki Nakano, Kazushige Horio (Shibaura Inst. Tech.)
pp. 1 - 6
ED2005-200
Analysis of Gate-Lag Phenomena in Unpassivarwd AlGaN/GaN HEMTs
Alberto F. Basile, Junji Kotani, Tamotsu Hashizume (Hokkaido Univ)
pp. 7 - 12
ED2005-201
C-V characterization of GaN-based MIS structures at high temperatures
Hiroki Kato, Marcin Miczek, Tamotsu Hashizume (Hokkaido Univ.)
pp. 13 - 16
ED2005-202
Investigation of Bandgap Bowing Parameter of Lattice-Matched Wurtzite InAlGaN Quarternary Alloy
Toshiyuki Takizawa, Satoshi Nakazawa, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric), Takashi Egawa (Nagoya Inst. Tech.)
pp. 17 - 21
ED2005-203
AlGaN/GaN HFETs with a low-temperature GaN cap layer
Tadayoshi Deguchi, Eiji Waki, Satoru Ono, Meiichi Yamashita, Atsushi Kamada, Atsushi Nakagawa (New Japan Radio), Hiroyasu Ishikawa, Takashi Egawa (Nagoya Institute of Technology)
pp. 23 - 27
ED2005-204
AlGaN/GaN-HEMTs with Recessed Ohmic Electrodes on Si
Juro Mita, Katsuaki Kaifu, Masanori Itoh, Yoshiaki Sano (Oki), Hiroyasu Ishikawa, Takashi Egawa (Nitech)
pp. 29 - 34
ED2005-205
Normally-off Operation of AlGaN/GaN Heterojunction Field Effect Transistors on Non-polar (11-20) plane
Masayuki Kuroda, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka (Matsushita Electric)
pp. 35 - 39
ED2005-206
0.15-mm-dual-gate AlGaN/GaN HEMT mixers
Kenji Shiojima, Takashi Makimura, Toshihiko Kosugi, Tetsuya Suemitsu, Naoteru Shigekawa, Masanobu Hiroki, Haruki Yokoyama (NTT)
pp. 41 - 44
ED2005-207
Highly Uniform GaN-HEMT on 3-inch Conductive SiC Substrate for Wireless Basestation Applications
Toshihide Kikkawa, Kenji Imanishi, Masahito Kanamura, Kazukiyo Joshin (Fujitsu Labs.)
pp. 45 - 49
ED2005-208
High Power AlGaN/GaN MIS-HEMT
Masahito Kanamura, Toshihide Kikkawa, Taisuke Iwai, Kenji Imanishi, Tokuro Kubo, Kazukiyo Joshin (Fujitsu Labs. Ltd.)
pp. 51 - 55