Print edition: ISSN 0913-5685
Online edition: ISSN 2432-6380
[TOP] | [2006] | [2007] | [2008] | [2009] | [2010] | [2011] | [2012] | [Japanese] / [English]
MW2005-146
A Low-Phase-Noise 76-GHz Planar Gunn VCO Using Flip-Chip Bonding Technology
Takashi Yoshida, Yoshimichi Fukasawa, Tadayoshi Deguchi, Kiyoshi Kawaguchi, Takahiro Sugiyama, Atsushi Nakagawa (New Japan Radio)
pp. 1 - 5
MW2005-147
Over 40-Gbit/s Digital Circuits Using InP HEMT Technology
Toshihide Suzuki, Yoichi Kawano, Yasuhiro Nakasha, Kozo Makiyama, Tsuyoshi Takahashi, Naoki Hara, Tatsuya Hirose (Fujitsu Labs.)
pp. 7 - 12
MW2005-148
Up to 80-Gbit/s Operations of 1:4 Demultiplexer IC with InP HBTs
Kimikazu Sano, Hiroyuki Fukuyama, Koichi Murata, Kenji Kurishima, Norihide Kashio, Takatomo Enoki, Hirohiko Sugahara (NTT PH Labo.)
pp. 13 - 18
MW2005-149
120-GHz Band 10-Gbit/s Millimeter-wave MMIC Waveguide Modules for Wireless Access System
Toshihiko Kosugi (NTT Photonics Lab.), Akihiko Hirata (NTT Microsystem Integration Lab.), Masami Tokumitsu, Hirohiko Sugahara (NTT Photonics Lab.)
pp. 19 - 22
MW2005-150
Increase of colllector current in hot eletron transistors controlled by gate bias
Issei Kashima, Akira Suwa (Tokyo Tech), Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech JST-CREST)
pp. 23 - 28
MW2005-151
Prediction of High-Frequency Characteristics for Hot-Electron Transistors Controlled by Gate Bias
Nobuya Machida, Mitsuhiko Igarashi, Tomohiro Yamada, Yasuyuki Miyamoto, Kazuhito Furuya (Tokyo Tech.)
pp. 29 - 32
MW2005-152
Effects of surface recombination on dc characteristics of InGaP/GaAs heterojunction bipolar transistors(HBT’s)
Airi Kurokawa, Zhi Jin, Hiroshi Ono, Kazuo Uchida, Shinji Nozaki, Hiroshi Morisaki (UEC)
pp. 33 - 38