Print edition: ISSN 0913-5685
Online edition: ISSN 2432-6380
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SDM2005-236
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Yasuhiko Ishikawa, Tochihiro Yamamoto, Michiharu Tabe (Shizuoka Univ.)
pp. 1 - 6
SDM2005-237
Periodic Coulomb oscillation in Si single-eletron transistor based on multiple islands
Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.)
pp. 7 - 11
SDM2005-238
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Takuya Kaizawa, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)
pp. 13 - 18
SDM2005-239
Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor
Kensaku Ohkura (Hiroshima Univ.), Tetsuya Kitade (ROHM), Anri Nakajima (Hiroshima Univ.)
pp. 19 - 22
SDM2005-240
[Invited Talk]
Demonstration and application of MOSFET-based single-electron transfer and detection at room temperature
-- Fabrication using SOI and measurements of its characteristics --
Katsuhiko Nishiguchi, Yukinori Ono, Akira Fujiwara, Hiroshi Inokawa (NTT), Yasuo Takahashi (Hokkaido Univ.)
pp. 23 - 28
SDM2005-241
Hybrid structures of CNT quantum dots and the GaAs/AlGaAs 2DEG
Koji Ishibashi, , Satoshi Moriyama, Takeo Uchida, (RIKEN)
pp. 29 - 33
SDM2005-242
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Ratno Nuryadi, Yasuhiko Ishikawa, Michiharu Tabe (Shizuoka Univ.)
pp. 35 - 38