Print edition: ISSN 0913-5685
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ED2006-176
[Invited Talk]
Fault diagnosis technology based on transistor behavor analysis
Masaru Sanada (KUT)
pp. 1 - 6
ED2006-177
*
Shunsuke Kunimatsu, Akifumi Imai (Kyoto Univ.), Kensuke Akiyama (Kanagawa Industrial Technology Center), Yoshihito Maeda (Kyoto Univ.)
pp. 7 - 10
ED2006-178
Takafumi Jonishi, Yuichiro Ando, Yoshihito Maeda (Kyoto Univ.)
pp. 11 - 14
ED2006-179
Hot-carrier reliability in Trench Lateral Power MOSFETs
Mutsumi Sawada, Shinichiro Matsunaga (Fuji Electric AT), Masaharu Yamaji, Akio Kitamura (Fuji Electric DT), Naoto Fujishima (Fuji Electric AT)
pp. 15 - 20
ED2006-180
Effects of heterointerface flatness on device performance of InP-based HEMT
-- Reduction of interface roughness scattering using (411)A-oriented substrate --
Issei Watanabe (NICT), Keisuke Shinohara (Rockwell), Takahiro Kitada (Univ.of Tokushima), Satoshi Shimomura (Ehimeiv.), Akira Endoh, Yoshimi Yamashita, Takashi Mimura (Fujitsu Labs.), Satoshi Hiyamizu (Osaka Univ./Nara National College of Tech.), Toshiaki Matsui (NICT)
pp. 21 - 25
ED2006-181
Surface passivation film dependence of 1/f noise characteristic in AlGaN/GaN HEMT
Takanori Matsushima, Masahiro Nakajima, Kazuki Nomoto, Masataka Satoh, Tohru Nakamura (Hosei Univ.)
pp. 27 - 31
ED2006-182
Seiya Kasai, Alberto F. Basile, Tamotsu Hashizume (Hokkaido Univ.)
pp. 33 - 38
ED2006-183
Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film
Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic)
pp. 39 - 42
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.