Print edition: ISSN 0913-5685
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ED2006-20
Improvement of crystal properties of SrS:Cu films for EL elements by using a rapid thermal annealing
Masaaki Isai, Kosuke Sasaki, Daisuke Nakagawa (Shizuoka Univ.)
pp. 1 - 5
ED2006-21
Preparation and evaluation of Mn oxide films for Li secodary batteries
Yuji Chonan, Masaaki Isai, Yasushi Tojyo (Ｓｈｉｚｕｏｋａ Ｕｎｉｖ．)
pp. 7 - 10
ED2006-22
Influence of Annealing Conditions on the Sensing Properties of Oxygen Gas Sensor with β-Ga2O3 Films Deposited by CSD Method for High Temperatures
Marilena Bartic (Shizuoka Univ.), Cristian-Ioan Baban (Al. I. Cuza Univ.), Masaaki Isai, Masami Ogita (Shizuoka Univ.)
pp. 11 - 14
ED2006-23
Fabrication of epitaxial γ-Al2O3 thin films by an oxide reduction method and its device applications
Takayuki Okada, Mikinori Ito (Toyohashi Univ. of Tech.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST)
pp. 15 - 20
ED2006-24
RPE-MOCVD-growth of Zn1-xCdxO film for visible emission region
Toshiya Ohashi, Junji Ishihara, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.)
pp. 21 - 26
ED2006-25
Control of ZnO nanodots on sapphire substrate.
Kota Okamatsu, Satoshi Nakagawa, Atsushi Nakamura, Toru Aoki, Jiro Temmyo (Shizuoka Univ.)
pp. 27 - 32
ED2006-26
Contorol of carbon-nano structure by thermal decomposition on SiC
Yoshitaka Hashimoto, Guogiang Zhang, Atsushi Nakamura, Akira Tanaka, Jiro Temmyo (Sizuoka Univ.)
pp. 33 - 37
ED2006-27
Synthesis of GaN based blue phosphors using metal EDTA complex
Shinya Koide, Kazuya Nakamura, Yuhuai Liu, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ), Atsushi Nakamura, Nobuyishi Nanbu (chubu chelest)
pp. 39 - 44
ED2006-28
Fabrication and Characterization of Photonic Crystal structure on microfabricated Si Substrate
Takeharu Ishii, Fumiaki Matsuoka, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.)
pp. 45 - 50
ED2006-29
Microstructure of group-III nitride semiconductors grown on m-plane SiC
Tetsuya Nagai, Takeshi Kawashima, Kiyotaka Nakano, Masataka Imura, Motoaki Iwaya, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki (Meijo Univ.)
pp. 51 - 54
ED2006-30
Heteroepitaxy of GaN for Si-GaN OEIC
Tatsuya Kawano, Susumu Hatakenaka, Mikinori Itoh, Akihiro Wakahara, Hiroshi Okada, Makoto Ishida (Toyohashi Univ. Tech.)
pp. 55 - 60
ED2006-31
Electrical Properties of GaPN
Akihiro Wakahara, Yuzo Furukawa, Atsushi Sato, Eri Shimada, Daisuke Minohara, Hiroo Yonezu (toyohashi Univ. of Tech.)
pp. 61 - 65
ED2006-32
InGaPN/GaPN Quantum Well Structures for Si/III-V-N Optoelectronic Integrated Circuits
Kazuyuki Umeno, Sung Man Kim, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.)
pp. 67 - 72
ED2006-33
Fabrication of MOSFETs and LEDs for Si/III-V-N Optoelectronic Integrated Circuits
Naruto Ohta, Yuji Morisaki, Soo-Young Moon, Seigi Ishiji, Yuzo Furukawa, Hiroo Yonezu, Akihiro Wakahara (Toyohashi Univ. Tech.)
pp. 73 - 78
ED2006-34
Improvement of crystal quality for high effeciency of spin-polarized electron source based on GaAs/GaAsP super-lattice structure
Toru Ujihara, Chen Bo, Kenichi Yasui, Ryosuke Sakai, Masahiro Yamamoto, Tsutomu Nakanisihi, Yoshikazu Takeda (Nagoya Univ.)
pp. 79 - 84
ED2006-35
Fabrication of patterned GaInAs/GaAs hetero-structure using amorphous arsenic mask
Yosuke Noritake, Takumi Yamada, Masao Tabuchi, Yoshikazu Takeda (Nagoya Univ.)
pp. 85 - 90
ED2006-36
Leakage current control of AlGaN Schottky interfaces by surface control process using thin Al layer
Junji Kotani, Masamitsu Kaneko, Tamotsu Hashizume (Hokkaido Univ.)
pp. 91 - 94
ED2006-37
Electrical characteristics of n-type diamond Schottky diodes and metal/diamond interfaces
Mariko Suzuki (Toshiba), Satoshi Koizumi (NIMS), Masayuki Katagiri (Univ of Tsukuba), Tomio Ono, Naoshi Sakuma, Hiroaki Yoshida, Tadashi Sakai (Toshiba)
pp. 95 - 100
ED2006-38
Estimation of trap parameters from a slow component of excess carrier decay curves
Masaya Ichimura (Nagoya Inst. Technol.)
pp. 101 - 106
ED2006-39
Light irradiation effect on single-hole-tunneling current of an SOI-FET
Zainal A. Burhanudin, Ratno Nuryadi, Michiharu Tabe (Shizuoka Univ.)
pp. 107 - 111
ED2006-40
Tunneling current oscillations in Si/SiO2/Si structures
Daniel Moraru, Daisuke Nagata (Shizuoka Univ.), Seiji Horiguchi (Akita Univ.), Ratno Nuryadi, Hiroya Ikeda, Michiharu Tabe (Shizuoka Univ.)
pp. 113 - 117
ED2006-41
Fabrication of Microchips for Blood Examination Integrated with Solution Pre-treatment Mechanism and Synchronous Photodetection Unit.
Toshihiko Noda, Nozomu Hirokubo (Toyohashi Univ. of Tech.), Hidekuni Takao (Toyohashi Univ. of Tech./JST), Narihiro Oku, Kouichi Matsumoto (HORIBA, Ltd.), Kazuaki Sawada, Makoto Ishida (Toyohashi Univ. of Tech./JST)
pp. 119 - 124
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.