IEICE Technical Report

Print edition: ISSN 0913-5685      Online edition: ISSN 2432-6380

Volume 119, Number 356

Silicon Device and Materials

Workshop Date : 2019-12-24 / Issue Date : 2019-12-17

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Table of contents

SDM2019-80
Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing
Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 1 - 4

SDM2019-81
Construction of CuInS2 nanoparticles through a bio-templated precursor by the cage-shaped protein for quantum devices
Yuma Karaki, Ryoko Miyanaga, Naofumi Okamoto, Yasuaki Ishikawa (NAIST), Ichiro Yamashita (Osaka Univ.), Yukiharu Uraoka (NAIST)
pp. 13 - 16

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan