Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380
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SDM2019-80
Evaluate interface charges and bulk oxide charges on SiO2/GaN MOS structure before and after post-metallization annealing
Masaaki Furukawa, Mutsunori Uenuma, Yasuaki Ishikawa, Yukiharu Uraoka (NAIST)
pp. 1 - 4
SDM2019-81
Construction of CuInS2 nanoparticles through a bio-templated precursor by the cage-shaped protein for quantum devices
Yuma Karaki, Ryoko Miyanaga, Naofumi Okamoto, Yasuaki Ishikawa (NAIST), Ichiro Yamashita (Osaka Univ.), Yukiharu Uraoka (NAIST)
pp. 13 - 16
Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.