IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 123, Number 250

Silicon Device and Materials

[PREV] [NEXT]

[TOP] | [2018] | [2019] | [2020] | [2021] | [2022] | [2023] | [2024] | [Japanese] / [English]

[PROGRAM] [BULK PDF DOWNLOAD]

Table of contents

SDM2023-62
[Invited Talk] SISPAD 2023 Review
Hajime Tanaka (Osaka Univ.)
pp. 1 - 6

SDM2023-63
[Invited Talk] Current Status and Future Prospects of GaN Vertical Power Devices on GaN substrates
Jun Suda (Nagoya Univ.)
p. 7

SDM2023-64
[Invited Talk] Overview of advanced logic devices and their enablement process technologies
Tomonari Yamamoto (TEL)
pp. 8 - 9

SDM2023-65
[Invited Talk] Quantum Transport Simulation for Analysis of Surface Roughness Scattering in Semiconductor Nanosheet
Jo Okada, Hajime Tanaka, Nobuya Mori (Osaka Univ.)
pp. 10 - 15

SDM2023-66
[Invited Talk] Superconducting quantum computing: current status and challenges
Eisuke Abe (RIKEN)
pp. 16 - 19

SDM2023-67
[Invited Talk] Development of Quantum Device Simulator toward Large-Scale Integration of Silicon Qubits
Hidehiro Asai, Shota Iizuka, Tohru Mogami, Junichi Hattori, Koichi Fukuda, Tsutomu Ikegami, Kimihiko Kato, Hiroshi Oka, Takahiro Mori (AIST)
pp. 20 - 25

SDM2023-68
[Invited Talk] Simulation of graphene surface plasmon propagation based on tight-binding method and finite-difference time-domain method
Satofumi Souma, Shota Ogisawa (Kobe Univ)
pp. 26 - 30

SDM2023-69
[Invited Talk] Self-Consistent Monte Carlo Device Simulation of Capture-Excitation Processes of Carriers
Futo Hashimoto, Toma Suzuki, Hideki Minari, Nobuya Nakazaki, Jun Komachi (Sony Semiconductor Solutions), Nobuyuki Sano (Univ. of Tsukuba)
pp. 31 - 34

SDM2023-70
[Invited Talk] Noies Source of MOSFETs Operating at Cryogenic Temperature
Takumi Inaba, Hiroshi Oka, Hidehiro Asai, Hiroshi Fuketa, Shota Iizuka, Kimihiko Kato, Shunsuke Shitakata, Koichi Fukuda, Takahiro Mori (AIST)
p. 35

SDM2023-71
Examination of high high-precision device modeling methods -- Comparison of Neural Networks and Linear Regression --
Kengo Nakata, Takayuki Mori, Jiro Ida (Kanazawa Inst. Tech.)
pp. 36 - 40

SDM2023-72
[Invited Talk] Characterization of Physical Properties in GaN under High Electric Field -- Impact Ionization Coefficients and Critical Electric Field --
Takuya Maeda (UTokyo)
pp. 41 - 46

SDM2023-73
[Invited Talk] DFT study on electronic structure and carrier-transport property of SiC-MOS interface.
Tomoya Ono (Kobe Univ.)
pp. 47 - 50

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.