IEICE Technical Report

Online edition: ISSN 2432-6380

Volume 125, Number 11

Organic Molecular Electronics

Workshop Date : 2025-04-18 - 2025-04-19 / Issue Date : 2025-04-11

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Table of contents

OME2025-1
[Invited Talk] Solid-Phase Crystallization of Indium Oxide and Its Application to High-Mobility Thin-Film Transistors
Mamoru Furuta (Kochi Univ. of Tech.)
pp. 1 - 4

OME2025-2
[Invited Talk] High performance oxide thin film transistor using ALD method
Takanori Takahashi, Yukiharu Uraoka (NAIST)
pp. 5 - 7

OME2025-3
[Invited Talk] Formation of semiconductor thin films using heated catalyst and crystallization technology
Akira Heya, Naoto Matsuo, Koji Sumitomo (Univ.of Hyogo)
pp. 8 - 11

OME2025-4
Deposition of Organic Thin Films by Pentacene Polymerization and Effects of Upper Ni Thin Film Addition and Soft X-Ray Irradiation
Misaki Nakayama, Kazuhiro Kanda, Koji Sumitomo, Akira Heya (Univ. of Hyogo)
pp. 12 - 15

OME2025-5
Low-Temperature Reduction and N Doping of Soft X-ray Irradiated Graphene Oxide by Atomic Hydrogen/Nitrogen -- Effect of Soft X-ray Irradiation Energy --
Misora Ueshimo, Junichi Inamoto, Yoshiaki Matsuo, Kazuhiro Kanda, Koji Sumitomo, Akira Heya (Univ. of Hyogo)
pp. 16 - 19

OME2025-6
(See Japanese page.)
pp. 20 - 22

OME2025-7
[Invited Talk] RTA Crystallization of InSb Thin Films Deposited by RF Sputtering
Tatsuya Okada, Takashi Noguchi (Univ. Ryukyus), Taizoh Sadoh (Kyushu Univ.)
pp. 23 - 24

OME2025-8
(See Japanese page.)
pp. 25 - 26

OME2025-9
[Invited Talk] Anti-icing/snow technology using stimulus-response coatings
Chihiro Urata, Atsushi Hozumi (AIST)
pp. 27 - 29

OME2025-10

Takumi Motai, Dai Taguchi, Takaaki Manaka (Science Tokyo)
pp. 30 - 34

OME2025-11
[Invited Talk] Fabrication of low-temperature poly-crystallized Si films on glasses by green YAG pulsed laser -- Melting crystallization method using high laser coherence and solid-phase crystallization method with a crystallization-induction layer --
Susumu Horita (JAIST)
pp. 35 - 38

OME2025-12
[Invited Talk] Machine learning to predict electrical properties of Si thin film laser annealing crystallization and SiC laser doping process
Hiroshi Ikenoue (KUT), Daisuke Nakamura, Toshifumi Kikuchi, Keita Katayama (Kyushu Univ.)
pp. 39 - 42

OME2025-13
CMOS inverter using poly-GeSn TFT and oxide TFT fabricated on different glass substrates
Akito Kurihara, Daiki Goshima, Akito Hara (Tohoku Gakuin Univ.)
pp. 43 - 46

OME2025-14
Low Temperature Poly Si TFT by sputtering technique -- Effective Crystallization on Polymer Sheets --
Takashi Noguchi (NIT)
pp. 47 - 48

Note: Each article is a technical report without peer review, and its polished version will be published elsewhere.


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan