Paper Abstract and Keywords |
Presentation |
2006-01-27 10:30
Study on switching characteristics of quantum wire transistors and single electron transistors controlled by Schottky wrap gate for ultra-low power quantum nano integrated logic circuits Seiya Kasai, Miki Yumoto, Hideki Hasegawa (Hokkaido Univ.) Link to ES Tech. Rep. Archives: ED2005-234 SDM2005-246 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
To confirm the ultra-low power consumption capability of quantum nano integrated logic circuits, such as nanoprocessors, switching characteristics of GaAs-based quantum wire transistors and single electron transistors controlled by nanometer-scale Schottky wrap gates (WPGs) were investigated theoretically and experimentally. Experimental data of subthreshold factor and logic swing values were found to be proportional to the temperature that could be explained by the theory. However, the some quantum wire transistors showed non-ideal temperature dependence of the logic swing, which were different from the theoretical prediction as well as the electron wave interaction and the tunneling. This indicated that there were another physical mechanisms controlling the logic swing value in the quantum wire transistors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
quantum nanocircuit / quantum wire transistor / single electron transistor / switching characteristic / logic swing / / / |
Reference Info. |
IEICE Tech. Rep., vol. 105, no. 550, ED2005-234, pp. 15-20, Jan. 2006. |
Paper # |
ED2005-234 |
Date of Issue |
2006-01-20 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
Link to ES Tech. Rep. Archives: ED2005-234 SDM2005-246 |
Conference Information |
Committee |
ED SDM |
Conference Date |
2006-01-26 - 2006-01-27 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Hokkaido Univ. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
ED |
Conference Code |
2006-01-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Study on switching characteristics of quantum wire transistors and single electron transistors controlled by Schottky wrap gate for ultra-low power quantum nano integrated logic circuits |
Sub Title (in English) |
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Keyword(1) |
quantum nanocircuit |
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quantum wire transistor |
Keyword(3) |
single electron transistor |
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switching characteristic |
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logic swing |
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1st Author's Name |
Seiya Kasai |
1st Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
2nd Author's Name |
Miki Yumoto |
2nd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
3rd Author's Name |
Hideki Hasegawa |
3rd Author's Affiliation |
Hokkaido University (Hokkaido Univ.) |
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Speaker |
Author-1 |
Date Time |
2006-01-27 10:30:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2005-234, SDM2005-246 |
Volume (vol) |
vol.105 |
Number (no) |
no.550(ED), no.552(SDM) |
Page |
pp.15-20 |
#Pages |
6 |
Date of Issue |
2006-01-20 (ED, SDM) |
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