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Paper Abstract and Keywords
Presentation 2006-04-21 14:55
High-Power Laser Diodes for DVD-R/RW/RAM by 4-inch Full-Wafer Process Technology
Hiroyuki Sumitomo, Satoshi Kajiyama, Hiroyuki Oguri, Takeshi Sakashita, Shinichi Domoto, Kensei Nakao, Toru Yamamoto, Tutomu Komatani, Hiroshi Kawakubo, Masanori Ono, Toshiaki Maejima, Shigekazu Izumi (EUD)
Abstract (in Japanese) (See Japanese page) 
(in English) We have successfully fabricated 650-nm band single lateral-mode high-power laser diodes (LDs) by using the 4-inch full-wafer process technology. We realized the high throughput LD production with high-power and reliable performances. The LD characteristics show excellent uniformity over a 88mm diameter area of the 4-inch wafer, e.g. (standard deviation/average) = ±2.3 % for Ith, and ±1.1 % for slope efficiency. The output power more than 350 mW had been obtained with stable lateral mode operation under the operation current 600 mA even at the high temperature 80 ℃. In addition, the operation voltage had been suppressed around 3.0 V even at high power operation by optimizing the ridge formation process and reducing the series resistance. These results confer the promising way to realize the high-speed (over 8×) dual layer recordable DVD systems.
Keyword (in Japanese) (See Japanese page) 
(in English) Laser Diode / 4 inch / High Power / DVD / AlGaInP / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 17, R2006-5, pp. 23-28, April 2006.
Paper # R2006-5 
Date of Issue 2006-04-14 (R, CPM, OPE) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee R CPM OPE  
Conference Date 2006-04-21 - 2006-04-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Packaging and reliability of optical componetns, etc. 
Paper Information
Registration To R 
Conference Code 2006-04-R-CPM-OPE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) High-Power Laser Diodes for DVD-R/RW/RAM by 4-inch Full-Wafer Process Technology 
Sub Title (in English)  
Keyword(1) Laser Diode  
Keyword(2) 4 inch  
Keyword(3) High Power  
Keyword(4) DVD  
Keyword(5) AlGaInP  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hiroyuki Sumitomo  
1st Author's Affiliation Eudyna Devices Inc. (EUD)
2nd Author's Name Satoshi Kajiyama  
2nd Author's Affiliation Eudyna Devices Inc. (EUD)
3rd Author's Name Hiroyuki Oguri  
3rd Author's Affiliation Eudyna Devices Inc. (EUD)
4th Author's Name Takeshi Sakashita  
4th Author's Affiliation Eudyna Devices Inc. (EUD)
5th Author's Name Shinichi Domoto  
5th Author's Affiliation Eudyna Devices Inc. (EUD)
6th Author's Name Kensei Nakao  
6th Author's Affiliation Eudyna Devices Inc. (EUD)
7th Author's Name Toru Yamamoto  
7th Author's Affiliation Eudyna Devices Inc. (EUD)
8th Author's Name Tutomu Komatani  
8th Author's Affiliation Eudyna Devices Inc. (EUD)
9th Author's Name Hiroshi Kawakubo  
9th Author's Affiliation Eudyna Devices Inc. (EUD)
10th Author's Name Masanori Ono  
10th Author's Affiliation Eudyna Devices Inc. (EUD)
11th Author's Name Toshiaki Maejima  
11th Author's Affiliation Eudyna Devices Inc. (EUD)
12th Author's Name Shigekazu Izumi  
12th Author's Affiliation Eudyna Devices Inc. (EUD)
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Speaker Author-1 
Date Time 2006-04-21 14:55:00 
Presentation Time 25 minutes 
Registration for R 
Paper # R2006-5, CPM2006-5, OPE2006-5 
Volume (vol) vol.106 
Number (no) no.17(R), no.18(CPM), no.19(OPE) 
Page pp.23-28 
#Pages
Date of Issue 2006-04-14 (R, CPM, OPE) 


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