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Paper Abstract and Keywords
Presentation 2006-06-30 11:00
1.3μm p-doped quantum dot lasers -- low driving current temperature stable 10 Gb/s direct modulation between 20℃ and 90℃ --
Mitsuru Ishida, Nobuaki Hatori (The Univ. of Tokyo), Koji Otsubo, Tsuyoshi Yamamoto (Fujitsu and OITDA), Yoshiaki Nakata, Hiroji Ebe (The Univ. of Tokyo), Mitsuru Sugawara (Fujitsu and OITDA), Yasuhiko Arakawa (The Univ. of Tokyo)
Abstract (in Japanese) (See Japanese page) 
(in English) Various distinguishable characteristics of quantum dot lasers have been achieved recently. In this report, we realized driving-current-control-free 10Gb/s operation of quantum dot lasers in the temperature range 20-90℃ with low-driving-current condition, where modulation current was 25.4-mAp-p and bias current was 23.4-mA. This achievement was owing to both the optimum design, which was based on the newly proposed quantum dot laser operation model, of short cavity structure to relax damping limited maximum modulation bandwidth using quantum dot active region with enhanced optical gain by multiple quantum-dot layers stacking, and application of p-doping to the nearby active region to reduce temperature sensitivity. Further more, we also clarified criteria for high-speed quantum dot lasers.
Keyword (in Japanese) (See Japanese page) 
(in English) Quantum Dot / Quantum Dot Laser / / / / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 134, LQE2006-22, pp. 15-20, June 2006.
Paper # LQE2006-22 
Date of Issue 2006-06-23 (OPE, LQE) 
ISSN Print edition: ISSN 0913-5685
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Conference Information
Committee OPE LQE  
Conference Date 2006-06-30 - 2006-06-30 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Quantum Effect Optical Devices (optical signal processing, LD, optical amplification, modulation etc.) and Photonic Integrations [ES Summer Meeting on Materials and Devices] 
Paper Information
Registration To LQE 
Conference Code 2006-06-OPE-LQE 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 1.3μm p-doped quantum dot lasers 
Sub Title (in English) low driving current temperature stable 10 Gb/s direct modulation between 20℃ and 90℃ 
Keyword(1) Quantum Dot  
Keyword(2) Quantum Dot Laser  
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1st Author's Name Mitsuru Ishida  
1st Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
2nd Author's Name Nobuaki Hatori  
2nd Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
3rd Author's Name Koji Otsubo  
3rd Author's Affiliation Fujitsu Ltd. and OITDA (Fujitsu and OITDA)
4th Author's Name Tsuyoshi Yamamoto  
4th Author's Affiliation Fujitsu Ltd. and OITDA (Fujitsu and OITDA)
5th Author's Name Yoshiaki Nakata  
5th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
6th Author's Name Hiroji Ebe  
6th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
7th Author's Name Mitsuru Sugawara  
7th Author's Affiliation Fujitsu Ltd. and OITDA (Fujitsu and OITDA)
8th Author's Name Yasuhiko Arakawa  
8th Author's Affiliation The University of Tokyo (The Univ. of Tokyo)
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Speaker Author-1 
Date Time 2006-06-30 11:00:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # OPE2006-18, LQE2006-22 
Volume (vol) vol.106 
Number (no) no.133(OPE), no.134(LQE) 
Page pp.15-20 
#Pages
Date of Issue 2006-06-23 (OPE, LQE) 


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