| Paper Abstract and Keywords |
| Presentation |
2006-10-06 14:55
GaN/InAlN/GaN Hetero Barrier Varactor Diodes
Nobuhisa Tanuma, Minoru Kubota, Munecazu Tacano (Meisei Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
The capacitance-voltage (C-V) characteristics of In0.17Al0.83N/GaN heterostructure barrier varactors (HBV) grown by metal-organic chemical vapor deposition on a c-oriented sapphire substrate were studied. The favorable material properties of wide-band-gap III-N’s are important in realizing the HBVs for frequency triples and distributed line pulse sharpens for practical use. The HBV structure consists of a 10-nm-thick undoped In0.17Al0.83N barrier sandwiched between two undoped GaN layers with a thickness of 5 nm. The barrier structure is further sandwiched between two n-GaN (n = 5 x 10^17 cm-3) layers with respective thicknesses of 500 nm and 1 um to form the top and the bottom ohmic contacts. At room temperature, the C-V characteristics show a maximum capacitance Cmax at approximately -0.6 V because of the induced spontaneous polarization field within the heterostructure, and the I-V characteristics show an increase in leakage current below -1 V and above 0.5 V. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
GaN / InAlN / Heterostructure Barrier Varactor / HBV / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 269, ED2006-171, pp. 103-106, Oct. 2006. |
| Paper # |
ED2006-171 |
| Date of Issue |
2006-09-28 (ED, CPM, LQE) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
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| Conference Information |
| Committee |
ED CPM LQE |
| Conference Date |
2006-10-05 - 2006-10-06 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ED |
| Conference Code |
2006-10-ED-CPM-LQE |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
GaN/InAlN/GaN Hetero Barrier Varactor Diodes |
| Sub Title (in English) |
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| Keyword(1) |
GaN |
| Keyword(2) |
InAlN |
| Keyword(3) |
Heterostructure Barrier Varactor |
| Keyword(4) |
HBV |
| Keyword(5) |
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| 1st Author's Name |
Nobuhisa Tanuma |
| 1st Author's Affiliation |
Meisei University (Meisei Univ.) |
| 2nd Author's Name |
Minoru Kubota |
| 2nd Author's Affiliation |
Meisei University (Meisei Univ.) |
| 3rd Author's Name |
Munecazu Tacano |
| 3rd Author's Affiliation |
Meisei University (Meisei Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2006-10-06 14:55:00 |
| Presentation Time |
25 minutes |
| Registration for |
ED |
| Paper # |
ED2006-171, CPM2006-108, LQE2006-75 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.269(ED), no.270(CPM), no.271(LQE) |
| Page |
pp.103-106 |
| #Pages |
4 |
| Date of Issue |
2006-09-28 (ED, CPM, LQE) |