| Paper Abstract and Keywords |
| Presentation |
2006-10-06 11:00
Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy
Masaaki Nakayama, Hiroyasu Tanaka (Osaka City Univ.), Masanobu Ando, Toshiya Uemura (Toyoda Gosei) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We have investigated photoluminescence (PL) properties of a high quality GaN thin film grown by metal-organic vapor phase epitaxy under intense excitation conditions in a wide temperature range from 10 to 300 K. It is found that there are two types of PL band peculiar to intense excitation conditions. In a low temperature region below 80 K, the PL process is dominated by exciton-exciton scattering, the so-called P emission. On the other hand, in a high temperature region above $\sim120$ K, a PL band, which is different from the P emission, appears. The energy spacing between the new PL band and the fundamental A exciton linearly increases with an increase in temperature. The energy spacing is estimated to be zero at absolute zero temperature by extrapolation of the temperature dependence. These PL profiles indicate that the PL band observed in the high temperature regime originates from exciton-electron scattering. Furthermore, we have confirmed that the exciton-electron scattering process produces optical gain leading to stimulated emission at room temperature. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
GaN / exciton / photoluminescence / exciton-exciton scattering / exciton-electron scattering / MOVPE / optical gain / stimulated emission |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 271, LQE2006-68, pp. 69-73, Oct. 2006. |
| Paper # |
LQE2006-68 |
| Date of Issue |
2006-09-28 (ED, CPM, LQE) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
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| Conference Information |
| Committee |
ED CPM LQE |
| Conference Date |
2006-10-05 - 2006-10-06 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
LQE |
| Conference Code |
2006-10-ED-CPM-LQE |
| Language |
English (Japanese title is available) |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Photoluminescence from inelastic scattering processes of excitons under intense-excitation conditions in a GaN thin film grown by Metal-organic vapor phase epitaxy |
| Sub Title (in English) |
|
| Keyword(1) |
GaN |
| Keyword(2) |
exciton |
| Keyword(3) |
photoluminescence |
| Keyword(4) |
exciton-exciton scattering |
| Keyword(5) |
exciton-electron scattering |
| Keyword(6) |
MOVPE |
| Keyword(7) |
optical gain |
| Keyword(8) |
stimulated emission |
| 1st Author's Name |
Masaaki Nakayama |
| 1st Author's Affiliation |
Osaka City University (Osaka City Univ.) |
| 2nd Author's Name |
Hiroyasu Tanaka |
| 2nd Author's Affiliation |
Osaka City University (Osaka City Univ.) |
| 3rd Author's Name |
Masanobu Ando |
| 3rd Author's Affiliation |
Toyoda Gosei Company Limited (Toyoda Gosei) |
| 4th Author's Name |
Toshiya Uemura |
| 4th Author's Affiliation |
Toyoda Gosei Company Limited (Toyoda Gosei) |
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| Speaker |
Author-1 |
| Date Time |
2006-10-06 11:00:00 |
| Presentation Time |
25 minutes |
| Registration for |
LQE |
| Paper # |
ED2006-164, CPM2006-101, LQE2006-68 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.269(ED), no.270(CPM), no.271(LQE) |
| Page |
pp.69-73 |
| #Pages |
5 |
| Date of Issue |
2006-09-28 (ED, CPM, LQE) |