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Paper Abstract and Keywords
Presentation 2006-10-13 16:10
Optical Response of InP-based HEMT and its Applications to High-Speed Photo-Detector and Converter
Noriyo Kobayashi, Hiroshi Murata (Osaka Univ.), Toshihiko Kosugi, Takatomo Enoki (NTT), Yasuyuki Okamura (Osaka Univ.) OCS2006-60 OPE2006-113 LQE2006-102
Abstract (in Japanese) (See Japanese page) 
(in English) Optical response and optical mixing in millimeter-wave transistors has studied. We measured the changes in the characteristic of InP-based HEMT(High Electron Mobility Transistor, fT=170GHz， fmax=350GHz) by irradiating a focused laser beam. We confirmed that drain current and microwave small signal gain of the HEMT were increased about 0.1mA and 2dB respectively by irradiating a 60$\mu$W focused laser beam with a wavelength of 1.55$\mu$m. Besides, increasing of gate capacitance about 1fF was observed. The detection of intensity modulated light signal with the modulation frequency of ~20GHz and its up-conversion to millimeter-wave frequency ranges were also demonstrated experimentally. We propose their applications to antenna integrated high-speed photo-detectors and converters for ROF system.
Keyword (in Japanese) (See Japanese page) 
(in English) millimeter-wave transistor / HEMT / optical signal detection / opto-electronic mixing / optical-control / / /  
Reference Info. IEICE Tech. Rep., vol. 106, no. 283, OPE2006-113, pp. 103-108, Oct. 2006.
Paper # OPE2006-113 
Date of Issue 2006-10-05 (OCS, OPE, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF OCS2006-60 OPE2006-113 LQE2006-102

Conference Information
Committee OPE LQE OCS  
Conference Date 2006-10-12 - 2006-10-13 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyusyu Univ. Chikushi Campus 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Ultra-high-speed transmission, modulation technologies, Ultra-high-speed optical / electrical devices, wideband WDM devices, detectors 
Paper Information
Registration To OPE 
Conference Code 2006-10-OPE-LQE-OCS 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Optical Response of InP-based HEMT and its Applications to High-Speed Photo-Detector and Converter 
Sub Title (in English)  
Keyword(1) millimeter-wave transistor  
Keyword(2) HEMT  
Keyword(3) optical signal detection  
Keyword(4) opto-electronic mixing  
Keyword(5) optical-control  
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Keyword(8)  
1st Author's Name Noriyo Kobayashi  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Hiroshi Murata  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Toshihiko Kosugi  
3rd Author's Affiliation NIPPON TELEGRAPH AND TELEPHONE CORPORATION (NTT)
4th Author's Name Takatomo Enoki  
4th Author's Affiliation NIPPON TELEGRAPH AND TELEPHONE CORPORATION (NTT)
5th Author's Name Yasuyuki Okamura  
5th Author's Affiliation Osaka University (Osaka Univ.)
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Speaker Author-1 
Date Time 2006-10-13 16:10:00 
Presentation Time 25 minutes 
Registration for OPE 
Paper # OCS2006-60, OPE2006-113, LQE2006-102 
Volume (vol) vol.106 
Number (no) no.282(OCS), no.283(OPE), no.284(LQE) 
Page pp.103-108 
#Pages 6 
Date of Issue 2006-10-05 (OCS, OPE, LQE) 

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