Paper Abstract and Keywords |
Presentation |
2007-01-19 14:50
A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) Link to ES Tech. Rep. Archives: ED2006-235 MW2006-188 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold voltage of 1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron•A) and off-state breakdown voltage (BVds) are 2.6m•cm2 and 640V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / Si substrate / hole injection / conductivity modulation / high power switching device / low on-state resistance / high breakdown voltage / normally-off |
Reference Info. |
IEICE Tech. Rep., vol. 106, no. 459, ED2006-235, pp. 193-197, Jan. 2007. |
Paper # |
ED2006-235 |
Date of Issue |
2007-01-10 (ED, MW) |
ISSN |
Print edition: ISSN 0913-5685 |
Copyright and reproduction |
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Link to ES Tech. Rep. Archives: ED2006-235 MW2006-188 |
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