| Paper Abstract and Keywords |
| Presentation |
2007-01-19 14:50
A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection
Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN hetero-junction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold voltage of 1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron•A) and off-state breakdown voltage (BVds) are 2.6m•cm2 and 640V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
GaN / Si substrate / hole injection / conductivity modulation / high power switching device / low on-state resistance / high breakdown voltage / normally-off |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 459, ED2006-235, pp. 193-197, Jan. 2007. |
| Paper # |
ED2006-235 |
| Date of Issue |
2007-01-10 (ED, MW) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
|
| Conference Information |
| Committee |
MW ED |
| Conference Date |
2007-01-17 - 2007-01-19 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
|
| Paper Information |
| Registration To |
ED |
| Conference Code |
2007-01-MW-ED |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
A Normally-off AlGaN/GaN Transistor with Low On-State Resistance Using Hole-Injection |
| Sub Title (in English) |
|
| Keyword(1) |
GaN |
| Keyword(2) |
Si substrate |
| Keyword(3) |
hole injection |
| Keyword(4) |
conductivity modulation |
| Keyword(5) |
high power switching device |
| Keyword(6) |
low on-state resistance |
| Keyword(7) |
high breakdown voltage |
| Keyword(8) |
normally-off |
| 1st Author's Name |
Yasuhiro Uemoto |
| 1st Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 2nd Author's Name |
Masahiro Hikita |
| 2nd Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 3rd Author's Name |
Hiroaki Ueno |
| 3rd Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 4th Author's Name |
Hisayoshi Matsuo |
| 4th Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 5th Author's Name |
Hidetoshi Ishida |
| 5th Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 6th Author's Name |
Manabu Yanagihara |
| 6th Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 7th Author's Name |
Tetsuzo Ueda |
| 7th Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 8th Author's Name |
Tsuyoshi Tanaka |
| 8th Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
| 9th Author's Name |
Daisuke Ueda |
| 9th Author's Affiliation |
Matsushita Electric-Panasonic (Panasonic) |
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| Speaker |
Author-1 |
| Date Time |
2007-01-19 14:50:00 |
| Presentation Time |
25 minutes |
| Registration for |
ED |
| Paper # |
ED2006-235, MW2006-188 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.459(ED), no.460(MW) |
| Page |
pp.193-197 |
| #Pages |
5 |
| Date of Issue |
2007-01-10 (ED, MW) |