| Paper Abstract and Keywords |
| Presentation |
2007-02-02 10:10
Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction
Tetsuya Uemura, Takao Marukame, Kenichi Matsuda, Masafumi Yamamoto (Hokkaido Univ.) |
| Abstract |
(in Japanese) |
(See Japanese page) |
| (in English) |
An epitaxial Co$_{50}$Fe$_{50}$/MgO/Co$_{50}$Fe$_{50}$ magnetic tunnel junction (MTJ) was fabricated and a relatively high tunnel magnetoresistance (TMR) ratio of 145\% at room temperature (RT) was obtained. Four remanent magnetization states in the single-crystalline Co$_{50}$Fe$_{50}$ electrode, due to the cubic anisotropy with easy axes of the $\langle 110\rangle$ directions, result in four possible angular-dependent TMRs, each separated by more than 20\% at RT. Analysis of the asteroid curve for Co$_{50}$Fe$_{50}$ indicated that the magnetic field along 22.5$^{\circ}$ from the $\langle 110\rangle$ directions made it possible to change the magnetization direction of the selected cell without disturbing those of the half-selected cells. Furthermore, a ternary content addressable memory (TCAM) using the multi-state MTJ was proposed and its operation was analyzed through circuit simulation. In addition to the non-volatility, the proposed TCAM has an advantage to reducing the device count to 1/3 of that for conventional CMOS-based TCAM. |
| Keyword |
(in Japanese) |
(See Japanese page) |
| (in English) |
magnetic tunnel junction / multiple-valued MRAM / ternary content addressable memory / / / / / |
| Reference Info. |
IEICE Tech. Rep., vol. 106, no. 520, ED2006-250, pp. 57-62, Feb. 2007. |
| Paper # |
ED2006-250 |
| Date of Issue |
2007-01-25 (ED, SDM) |
| ISSN |
Print edition: ISSN 0913-5685 |
| Download PDF |
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| Conference Information |
| Committee |
SDM ED |
| Conference Date |
2007-02-01 - 2007-02-02 |
| Place (in Japanese) |
(See Japanese page) |
| Place (in English) |
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| Topics (in Japanese) |
(See Japanese page) |
| Topics (in English) |
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| Paper Information |
| Registration To |
ED |
| Conference Code |
2007-02-ED-SDM |
| Language |
Japanese |
| Title (in Japanese) |
(See Japanese page) |
| Sub Title (in Japanese) |
(See Japanese page) |
| Title (in English) |
Non-volatile ternary content addressable memory using CoFe-based magnetic tunnel junction |
| Sub Title (in English) |
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| Keyword(1) |
magnetic tunnel junction |
| Keyword(2) |
multiple-valued MRAM |
| Keyword(3) |
ternary content addressable memory |
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| 1st Author's Name |
Tetsuya Uemura |
| 1st Author's Affiliation |
Hokkaidoi Univ. (Hokkaido Univ.) |
| 2nd Author's Name |
Takao Marukame |
| 2nd Author's Affiliation |
Hokkaidoi Univ. (Hokkaido Univ.) |
| 3rd Author's Name |
Kenichi Matsuda |
| 3rd Author's Affiliation |
Hokkaidoi Univ. (Hokkaido Univ.) |
| 4th Author's Name |
Masafumi Yamamoto |
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Hokkaidoi Univ. (Hokkaido Univ.) |
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| Speaker |
Author-1 |
| Date Time |
2007-02-02 10:10:00 |
| Presentation Time |
20 minutes |
| Registration for |
ED |
| Paper # |
ED2006-250, SDM2006-238 |
| Volume (vol) |
vol.106 |
| Number (no) |
no.520(ED), no.521(SDM) |
| Page |
pp.57-62 |
| #Pages |
6 |
| Date of Issue |
2007-01-25 (ED, SDM) |