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Paper Abstract and Keywords
Presentation 2007-06-15 13:50
Study of localized spins in Be delta-doped GaAs structure
J.p. Noh, D.w. Jung, A. z. m. Touhidul Islam, Nobuo Otauka (JAIST) ED2007-33
Abstract (in Japanese) (See Japanese page) 
(in English) The correlation of between the negative magnetoresistance and concentration of localized holes in Be/Si pair delta-doped GaAs structures grown by molecular beam epitaxy (MBE) was investigated. The negative magnetoresistance and anomalous Hall resistance were observed in a high-temperature range. The transition temperature from the negative magnetoresistance to the positive one and the magnitude of negative magnetoresistance are directly correlated to the concentration of localized holes. Dependence of anomalous Hall resistance on the temperature and applied magnetic field is closely correlated to that of negative magnetoresistance for each sample. The dependence is explained on the basis of a paramagnetic state of interacting localized spins coexisting with itinerant holes in the samples. These results strongly suggest the existence of localized spins in the pair delta-doped structure at high temperatures.
Keyword (in Japanese) (See Japanese page) 
(in English) localized spins / negative magnetoresistance / anomalous Hall resistance / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 95, ED2007-33, pp. 13-16, June 2007.
Paper # ED2007-33 
Date of Issue 2007-06-08 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-33

Conference Information
Committee ED  
Conference Date 2007-06-15 - 2007-06-16 
Place (in Japanese) (See Japanese page) 
Place (in English) Toyama Univ. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor Process, Device, etc 
Paper Information
Registration To ED 
Conference Code 2007-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Study of localized spins in Be delta-doped GaAs structure 
Sub Title (in English)  
Keyword(1) localized spins  
Keyword(2) negative magnetoresistance  
Keyword(3) anomalous Hall resistance  
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1st Author's Name J.p. Noh  
1st Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
2nd Author's Name D.w. Jung  
2nd Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
3rd Author's Name A. z. m. Touhidul Islam  
3rd Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
4th Author's Name Nobuo Otauka  
4th Author's Affiliation Japan Advanced Institute of Science and Technology (JAIST)
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Speaker Author-1 
Date Time 2007-06-15 13:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-33 
Volume (vol) vol.107 
Number (no) no.95 
Page pp.13-16 
#Pages 4 
Date of Issue 2007-06-08 (ED) 

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