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Paper Abstract and Keywords
Presentation 2007-07-26 08:55
CMOS voltage reference based on threshold voltage of a MOSFET
Ken Ueno, Tetsuya Hirose, Tetsuya Asai, Yoshihito Amemiya (Hokkaido Univ.) ICD2007-38
Abstract (in Japanese) (See Japanese page) 
(in English) We developed a voltage reference circuit using MOSFETs operated in the subthreshold region, except for the MOS resistor in the strong-inversion and deep triode region. The circuit consists of a current source subcircuit
and a constant-voltage subcircuit without resistors. We confirmed the operation of the circuit by SPICE simulation with a set of 0.35-um standard CMOS parameters. SPICE simulation demonstrated that the circuit generates the threshold voltage of nMOSFET, about 0.81 V, at absolute zero.
The accuracy of the reference circuit was within ±0.2 % in a temperature range of -20 - 100 ℃ and within ±0.5 % for a VDD range of 1.2 - 3 V. To confirm the circuit operation with device variation,
we carried out Monte Carlo simulations assuming process spread and device mismatch in all MOSFETs. The error of the output voltage was within ±0.3 % in the temperature range. The total power consumption of the circuit was 0.5 uW with a VDD of 1.5 V.
Keyword (in Japanese) (See Japanese page) 
(in English) CMOS / Voltage reference / Subthreshold region / Weak-inversion / Deep triode region / Ultralow-power / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 163, ICD2007-38, pp. 5-10, July 2007.
Paper # ICD2007-38 
Date of Issue 2007-07-19 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ICD2007-38

Conference Information
Committee ICD ITE-IST  
Conference Date 2007-07-26 - 2007-07-27 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2007-07-ICD-ITE-IST 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) CMOS voltage reference based on threshold voltage of a MOSFET 
Sub Title (in English)  
Keyword(1) CMOS  
Keyword(2) Voltage reference  
Keyword(3) Subthreshold region  
Keyword(4) Weak-inversion  
Keyword(5) Deep triode region  
Keyword(6) Ultralow-power  
Keyword(7)  
Keyword(8)  
1st Author's Name Ken Ueno  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Tetsuya Hirose  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Tetsuya Asai  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Yoshihito Amemiya  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2007-07-26 08:55:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # ICD2007-38 
Volume (vol) vol.107 
Number (no) no.163 
Page pp.5-10 
#Pages 6 
Date of Issue 2007-07-19 (ICD) 

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