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Paper Abstract and Keywords
Presentation 2007-08-24 11:35
An analysis of asymmetry and orientation dependence of n-MOSFETs
Toshihiro Matsuda, Yuya Sugiyama, Hideyuki Iwata (Toyama Pref. Univ.), Takashi Ohzone (Okayama Pref. Univ.) SDM2007-161 ICD2007-89
Abstract (in Japanese) (See Japanese page) 
(in English) n-MOSFETs with 8 different channel orientation and three kinds of process conditions were measured and symmetry of IDsat and IBmax with respect to the interchange of source and drain was examined． Although both IDsat and IBmax have similar channel orientation dependence， only IBmax in interchanged S/D measurements shows asymmetrical characteristics， which can be applied to a sensitive method for device asymmetry detection．
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / asymmetry / orientation dependence / drain current / substrate current / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 194, SDM2007-161, pp. 113-116, Aug. 2007.
Paper # SDM2007-161 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-161 ICD2007-89

Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To SDM 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) An analysis of asymmetry and orientation dependence of n-MOSFETs 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) asymmetry  
Keyword(3) orientation dependence  
Keyword(4) drain current  
Keyword(5) substrate current  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Toshihiro Matsuda  
1st Author's Affiliation Toyama Prefectural University (Toyama Pref. Univ.)
2nd Author's Name Yuya Sugiyama  
2nd Author's Affiliation Toyama Prefectural University (Toyama Pref. Univ.)
3rd Author's Name Hideyuki Iwata  
3rd Author's Affiliation Toyama Prefectural University (Toyama Pref. Univ.)
4th Author's Name Takashi Ohzone  
4th Author's Affiliation Okayama Prefectural University (Okayama Pref. Univ.)
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Speaker Author-1 
Date Time 2007-08-24 11:35:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2007-161, ICD2007-89 
Volume (vol) vol.107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.113-116 
#Pages 4 
Date of Issue 2007-08-16 (SDM, ICD) 

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