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Paper Abstract and Keywords
Presentation 2007-08-24 16:05
A 45nm 2port 8T-SRAM using hierarchical replica bitline technique with immunity from simultaneous R/W access issues
Satoshi Ishikura, M. Kurumada, Toshio Terano, Yoshinobu Yamagami, Naoki Kotani, Katsuji Satomi (Matushita Electric Industrial), Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara (Renesas Technology), Hironori Akamatsu (Matushita Electric Industrial) SDM2007-168 ICD2007-96
Abstract (in Japanese) (See Japanese page) 
(in English) We propose a new 2port SRAM with a 8T single-read-bitline (SRBL) memory cell for 45nm SOCs. Access time tends to be slower as fabrication is scaled down because of the random threshold-voltage variations. The Divided read Bit line scheme with Shared local Amplifier (DBSA) realizes fast access time without increasing area penalty. We also show an additional important issue of a simultaneous Read and Write access at the same row by using DBSA with the 8T-SRBL memory cell. A rise of the storage node causes the misreading. The Read End detecting Replica circuit (RER) and the Local read bit line with Dummy Capacitance (LDC) are introduced to solve this issue. A 128BL×512WL 64Kb 2port SRAM macro which cell size is 0.597μm2 using these schemes was fabricated by 45nm LSTP CMOS process.
Keyword (in Japanese) (See Japanese page) 
(in English) 2port SRAM / Single Bit Line / 8T Memory Cell / Hierarchical Bit Line / Simultaneous Read/Write Access / Misread / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 195, ICD2007-96, pp. 145-148, Aug. 2007.
Paper # ICD2007-96 
Date of Issue 2007-08-16 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-168 ICD2007-96

Conference Information
Committee ICD SDM  
Conference Date 2007-08-23 - 2007-08-24 
Place (in Japanese) (See Japanese page) 
Place (in English) Kitami Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) VLSI Circuit and Device Technologies (High Speed, Low Voltage, and Low Power Consumption) 
Paper Information
Registration To ICD 
Conference Code 2007-08-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) A 45nm 2port 8T-SRAM using hierarchical replica bitline technique with immunity from simultaneous R/W access issues 
Sub Title (in English)  
Keyword(1) 2port SRAM  
Keyword(2) Single Bit Line  
Keyword(3) 8T Memory Cell  
Keyword(4) Hierarchical Bit Line  
Keyword(5) Simultaneous Read/Write Access  
Keyword(6) Misread  
Keyword(7)  
Keyword(8)  
1st Author's Name Satoshi Ishikura  
1st Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matushita Electric Industrial)
2nd Author's Name M. Kurumada  
2nd Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matushita Electric Industrial)
3rd Author's Name Toshio Terano  
3rd Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matushita Electric Industrial)
4th Author's Name Yoshinobu Yamagami  
4th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matushita Electric Industrial)
5th Author's Name Naoki Kotani  
5th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matushita Electric Industrial)
6th Author's Name Katsuji Satomi  
6th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matushita Electric Industrial)
7th Author's Name Koji Nii  
7th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
8th Author's Name Makoto Yabuuchi  
8th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
9th Author's Name Yasumasa Tsukamoto  
9th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
10th Author's Name Shigeki Ohbayashi  
10th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
11th Author's Name Toshiyuki Oashi  
11th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
12th Author's Name Hiroshi Makino  
12th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
13th Author's Name Hirofumi Shinohara  
13th Author's Affiliation Renesas Technology Corp. (Renesas Technology)
14th Author's Name Hironori Akamatsu  
14th Author's Affiliation Matsushita Electric Industrial Co., Ltd. (Matushita Electric Industrial)
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Speaker Author-1 
Date Time 2007-08-24 16:05:00 
Presentation Time 25 minutes 
Registration for ICD 
Paper # SDM2007-168, ICD2007-96 
Volume (vol) vol.107 
Number (no) no.194(SDM), no.195(ICD) 
Page pp.145-148 
#Pages
Date of Issue 2007-08-16 (SDM, ICD) 


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