IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2007-09-21 11:25
The growth mechanism of low-resistivity ITO films onto the glass substrates by a hot-cathode plasma sputtering method
Akihiko Kono, Fumiya Shoji (Kyushu Kyoritsu Univ.) ED2007-148 OME2007-35 Link to ES Tech. Rep. Archives: ED2007-148 OME2007-35
Abstract (in Japanese) (See Japanese page) 
(in English) Tin-doped indium oxide (ITO) films fabricated on glass substrates using a hot-cathode plasma sputtering method exhibited low resistivity of 9.7×10-5 Ω cm, which is due to a high carrier density of 2.1×1021 cm-3. The change in the number of carriers, N, as a function of film thickness d, strongly suggests that oxygen extraction in the initial stages of ITO film growth on the glass substrate surface, creates oxygen vacancies as an electron carrier source for improvement in the resistivity of the films.
Keyword (in Japanese) (See Japanese page) 
(in English) Low-resistivity ITO films / Oxygen vacancies / Hot-cathode plasma sputtering method / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 227, ED2007-148, pp. 25-30, Sept. 2007.
Paper # ED2007-148 
Date of Issue 2007-09-14 (ED, OME) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-148 OME2007-35 Link to ES Tech. Rep. Archives: ED2007-148 OME2007-35

Conference Information
Committee ED OME  
Conference Date 2007-09-21 - 2007-09-21 
Place (in Japanese) (See Japanese page) 
Place (in English) Kyushu Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-09-ED-OME 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) The growth mechanism of low-resistivity ITO films onto the glass substrates by a hot-cathode plasma sputtering method 
Sub Title (in English)  
Keyword(1) Low-resistivity ITO films  
Keyword(2) Oxygen vacancies  
Keyword(3) Hot-cathode plasma sputtering method  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Akihiko Kono  
1st Author's Affiliation Kyushu Kyoritsu University (Kyushu Kyoritsu Univ.)
2nd Author's Name Fumiya Shoji  
2nd Author's Affiliation Kyushu Kyoritsu University (Kyushu Kyoritsu Univ.)
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2007-09-21 11:25:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-148, OME2007-35 
Volume (vol) vol.107 
Number (no) no.227(ED), no.228(OME) 
Page pp.25-30 
#Pages
Date of Issue 2007-09-14 (ED, OME) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan