Paper Abstract and Keywords |
Presentation |
2007-10-30 10:25
Comparative Study on Drive Current of non-Si n-Channel MOSFETs based on Quantum-Corrected Monte Calro Simulation Takashi Mori, Yuusuke Azuma, Hideaki Tsuchiya (Kobe Univ.) VLD2007-51 SDM2007-195 Link to ES Tech. Rep. Archives: SDM2007-195 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
A variety of new channel materials have been intensively studied to achieve a continuous enhancement in drive current of n-channel MOSFETs. To precisely estimate the device performance of MOSFETs with the new channel materials, a device simulation considering bandstructure, scattering and quantum mechanical effects is indispensable. In this paper, we present a quantum-corrected Monte Carlo device simulation to examine advantages of new channel materials such as III-V compound semiconductors and Ge. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
high-mobility channel materials / drive current / quantum-corrected Monte Carlo method / quasi-ballistic transport / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 297, SDM2007-195, pp. 5-10, Oct. 2007. |
Paper # |
SDM2007-195 |
Date of Issue |
2007-10-23 (VLD, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
VLD2007-51 SDM2007-195 Link to ES Tech. Rep. Archives: SDM2007-195 |
Conference Information |
Committee |
SDM VLD |
Conference Date |
2007-10-30 - 2007-10-31 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Process, Device, Circuit Simulation, etc. |
Paper Information |
Registration To |
SDM |
Conference Code |
2007-10-SDM-VLD |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Comparative Study on Drive Current of non-Si n-Channel MOSFETs based on Quantum-Corrected Monte Calro Simulation |
Sub Title (in English) |
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Keyword(1) |
high-mobility channel materials |
Keyword(2) |
drive current |
Keyword(3) |
quantum-corrected Monte Carlo method |
Keyword(4) |
quasi-ballistic transport |
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1st Author's Name |
Takashi Mori |
1st Author's Affiliation |
Kobe University (Kobe Univ.) |
2nd Author's Name |
Yuusuke Azuma |
2nd Author's Affiliation |
Kobe University (Kobe Univ.) |
3rd Author's Name |
Hideaki Tsuchiya |
3rd Author's Affiliation |
Kobe University (Kobe Univ.) |
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Speaker |
Author-1 |
Date Time |
2007-10-30 10:25:00 |
Presentation Time |
25 minutes |
Registration for |
SDM |
Paper # |
VLD2007-51, SDM2007-195 |
Volume (vol) |
vol.107 |
Number (no) |
no.295(VLD), no.297(SDM) |
Page |
pp.5-10 |
#Pages |
6 |
Date of Issue |
2007-10-23 (VLD, SDM) |
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