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| Presentation | 2007-10-30 15:00 Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL Hiroyuki Takashino, Takeshi Okagaki, Tetsuya Uchida, Takashi Hayashi, Motoaki Tanizawa, Eiji Tsukuda, Katsumi Eikyu, Shoji Wakahara, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue (Renesas Technology Corp.)  VLD2007-57 SDM2007-201 Link to ES Tech. Rep. Archives: SDM2007-201 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Numerical study in conjunction with comprehensive bending experiments has demonstrated that \orientation{100}-Si has the optimum channel direction along <110> in terms of the device performance of strained 65nm-node nMOSFETs with Contact Etch Stop Layer (CESL), and that both the shear strain component and the quantum confinement effect play an important role in this superiority. |
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| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Shear Strain / Quantum Confinement Effect / CESL / Drift-Diffusion Simulator / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 297, SDM2007-201, pp. 33-36, Oct. 2007. | |
| Paper # | SDM2007-201 | |
| Date of Issue | 2007-10-23 (VLD, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | VLD2007-57 SDM2007-201 Link to ES Tech. Rep. Archives: SDM2007-201 |
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| Conference Information | |
| Committee | SDM VLD |
| Conference Date | 2007-10-30 - 2007-10-31 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kikai-Shinko-Kaikan Bldg. |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | Process, Device, Circuit Simulation, etc. |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2007-10-SDM-VLD |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Impact of Shear Strain and Quantum Confinement on <110> Channel nMOSFET with High-Stress CESL |
| Sub Title (in English) | |
| Keyword(1) | Shear Strain |
| Keyword(2) | Quantum Confinement Effect |
| Keyword(3) | CESL |
| Keyword(4) | Drift-Diffusion Simulator |
| Keyword(5) | |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Hiroyuki Takashino |
| 1st Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 2nd Author's Name | Takeshi Okagaki |
| 2nd Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 3rd Author's Name | Tetsuya Uchida |
| 3rd Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 4th Author's Name | Takashi Hayashi |
| 4th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 5th Author's Name | Motoaki Tanizawa |
| 5th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 6th Author's Name | Eiji Tsukuda |
| 6th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 7th Author's Name | Katsumi Eikyu |
| 7th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 8th Author's Name | Shoji Wakahara |
| 8th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 9th Author's Name | Kiyoshi Ishikawa |
| 9th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 10th Author's Name | Osamu Tsuchiya |
| 10th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
| 11th Author's Name | Yasuo Inoue |
| 11th Author's Affiliation | Renesas Technology Corporation (Renesas Technology Corp.) |
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| 12th Author's Affiliation | () |
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| 13th Author's Affiliation | () |
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| 14th Author's Affiliation | () |
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| 15th Author's Affiliation | () |
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| 16th Author's Affiliation | () |
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| 17th Author's Affiliation | () |
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| 18th Author's Affiliation | () |
| Speaker | Author-1 |
| Date Time | 2007-10-30 15:00:00 |
| Presentation Time | 25 minutes |
| Registration for | SDM |
| Paper # | VLD2007-57, SDM2007-201 |
| Volume (vol) | vol.107 |
| Number (no) | no.295(VLD), no.297(SDM) |
| Page | pp.33-36 |
| #Pages | 4 |
| Date of Issue | 2007-10-23 (VLD, SDM) |
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