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| Presentation | 2007-11-16 13:50 Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water Takashi Futatsuki, Taro Oe (Organo Corp.), Hidemitsu Aoki, Naoyoshi Komatsu, Chiharu Kimura, Takashi Sugino (Osaka Univ.)  R2007-48 ED2007-181 SDM2007-216 Link to ES Tech. Rep. Archives: ED2007-181 SDM2007-216 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | The field effect transistor (FET) devices on Silicon Carbide (SiC) and Gallium nitride (GaN), which have a wide bandgap, are under development to realize high power operation. In order to improve the performance of FET, the formation of gate insulator film on semiconductor is a serious issue. High temperature and long time are required to oxidize SiC and GaN by the conventional thermal dry oxidation. We have investigated the SiC and GaN oxidation process using high pressure and high temperature water, so that the SiC and GaN oxidation could be done at low temperature. In this paper, we firstly report that 50nm oxide film is formed on SiC surface by the supercritical water oxidation (400℃, 25 MPa, 1 hour). We also found that the stoichiometric Ga2O3 layer is formed on GaN surface by the supercritical water oxidation (400℃, 25MPa). | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | SiC / GaN / FET / oxide / supercritical water / subcritical water / high pressure / high temperature | |
| Reference Info. | IEICE Tech. Rep., vol. 107, no. 319, ED2007-181, pp. 13-17, Nov. 2007. | |
| Paper # | ED2007-181 | |
| Date of Issue | 2007-11-09 (R, ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | R2007-48 ED2007-181 SDM2007-216 Link to ES Tech. Rep. Archives: ED2007-181 SDM2007-216 |
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| Conference Information | |
| Committee | SDM R ED |
| Conference Date | 2007-11-16 - 2007-11-16 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2007-11-SDM-R-ED |
| Language | Japanese |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Oxidation of SiC and GaN Surface in High Pressure and High Temperature Water |
| Sub Title (in English) | |
| Keyword(1) | SiC |
| Keyword(2) | GaN |
| Keyword(3) | FET |
| Keyword(4) | oxide |
| Keyword(5) | supercritical water |
| Keyword(6) | subcritical water |
| Keyword(7) | high pressure |
| Keyword(8) | high temperature |
| 1st Author's Name | Takashi Futatsuki |
| 1st Author's Affiliation | Organo Corporation (Organo Corp.) |
| 2nd Author's Name | Taro Oe |
| 2nd Author's Affiliation | Organo Corporation (Organo Corp.) |
| 3rd Author's Name | Hidemitsu Aoki |
| 3rd Author's Affiliation | Osaka University (Osaka Univ.) |
| 4th Author's Name | Naoyoshi Komatsu |
| 4th Author's Affiliation | Osaka University (Osaka Univ.) |
| 5th Author's Name | Chiharu Kimura |
| 5th Author's Affiliation | Osaka University (Osaka Univ.) |
| 6th Author's Name | Takashi Sugino |
| 6th Author's Affiliation | Osaka University (Osaka Univ.) |
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| Speaker | Author-1 |
| Date Time | 2007-11-16 13:50:00 |
| Presentation Time | 25 minutes |
| Registration for | ED |
| Paper # | R2007-48, ED2007-181, SDM2007-216 |
| Volume (vol) | vol.107 |
| Number (no) | no.318(R), no.319(ED), no.320(SDM) |
| Page | pp.13-17 |
| #Pages | 5 |
| Date of Issue | 2007-11-09 (R, ED, SDM) |
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