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Paper Abstract and Keywords
Presentation 2007-11-27 14:45
Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs
Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190
Abstract (in Japanese) (See Japanese page) 
(in English) We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) that had SiN/SiO2/SiN triple-layer insulators and measured their DC and RF characteristics at 300 and 16 K. As expected, the drain-source current and the maximum DC transconductance increased at 16 K. We observed an increase of 14 to 28% in the value of cutoff frequency fT at 16 K over that at 300 K. At 16 K, we obtained a maximum fT of 176 GHz at a gate length Lg of 45 nm and a source-drain spacing Lsd of 2 um. We estimated the average electron velocity under the gate by a transit time analysis. The average velocities were 2.2e7 cm/s at 300 K and 2.7e7 cm/s at 16 K. The increase in the value of fT results from an increase in electron velocity and reductions in access resistances and channel charging time. Furthermore, we obtained an fT of 156 GHz at 300 K and 194 GHz at 16 K for the 45-nm-gate MIS-HEMT by reducing the source-drain spacing Lsd from 2 um to 1.5 um.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN / MIS-HEMTs / Cryogenic characteristics / Cutoff frequency / fT / Transit time analysis / Electron velocity /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 355, ED2007-190, pp. 17-21, Nov. 2007.
Paper # ED2007-190 
Date of Issue 2007-11-20 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-190

Conference Information
Committee ED  
Conference Date 2007-11-27 - 2007-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. Research Institute of Electrical Communication 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-11-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs 
Sub Title (in English)  
Keyword(1) AlGaN/GaN  
Keyword(2) MIS-HEMTs  
Keyword(3) Cryogenic characteristics  
Keyword(4) Cutoff frequency  
Keyword(5) fT  
Keyword(6) Transit time analysis  
Keyword(7) Electron velocity  
Keyword(8)  
1st Author's Name Akira Endoh  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Issei Watanabe  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Yoshimi Yamashita  
3rd Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab.)
4th Author's Name Takashi Mimura  
4th Author's Affiliation National Institute of Information and Communications Technology (NICT)
5th Author's Name Toshiaki Matsui  
5th Author's Affiliation National Institute of Information and Communications Technology (NICT)
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Speaker Author-1 
Date Time 2007-11-27 14:45:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-190 
Volume (vol) vol.107 
Number (no) no.355 
Page pp.17-21 
#Pages 5 
Date of Issue 2007-11-20 (ED) 

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