Paper Abstract and Keywords |
Presentation |
2007-11-27 14:45
Cryogenic Characteristics of Sub-100-nm-Gate AlGaN/GaN MIS-HEMTs Akira Endoh, Issei Watanabe (NICT), Yoshimi Yamashita (Fujitsu Lab.), Takashi Mimura, Toshiaki Matsui (NICT) ED2007-190 Link to ES Tech. Rep. Archives: ED2007-190 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We fabricated sub-100-nm-gate AlGaN/GaN metal-insulator-semiconductor (MIS) high electron mobility transistors (HEMTs) that had SiN/SiO2/SiN triple-layer insulators and measured their DC and RF characteristics at 300 and 16 K. As expected, the drain-source current and the maximum DC transconductance increased at 16 K. We observed an increase of 14 to 28% in the value of cutoff frequency fT at 16 K over that at 300 K. At 16 K, we obtained a maximum fT of 176 GHz at a gate length Lg of 45 nm and a source-drain spacing Lsd of 2 um. We estimated the average electron velocity under the gate by a transit time analysis. The average velocities were 2.2e7 cm/s at 300 K and 2.7e7 cm/s at 16 K. The increase in the value of fT results from an increase in electron velocity and reductions in access resistances and channel charging time. Furthermore, we obtained an fT of 156 GHz at 300 K and 194 GHz at 16 K for the 45-nm-gate MIS-HEMT by reducing the source-drain spacing Lsd from 2 um to 1.5 um. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
AlGaN/GaN / MIS-HEMTs / Cryogenic characteristics / Cutoff frequency / fT / Transit time analysis / Electron velocity / |
Reference Info. |
IEICE Tech. Rep., vol. 107, no. 355, ED2007-190, pp. 17-21, Nov. 2007. |
Paper # |
ED2007-190 |
Date of Issue |
2007-11-20 (ED) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2007-190 Link to ES Tech. Rep. Archives: ED2007-190 |