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Paper Abstract and Keywords
Presentation 2007-11-27 13:30
Research on SiGe/Si HEMT for millimeter-wave band operation
Norio Onojima, Akifumi Kasamatsu, Nobumitsu Hirose, Takashi Mimura, Toshiaki Matsui (NICT) ED2007-187
Abstract (in Japanese) (See Japanese page) 
(in English) We have fabricated sub-100-nm-gate-length SiGe/Si high electron mobility transistors (HEMTs) toward ultra-high-speed Si-based devices operating in the millimeter-wave band. A 60-nm-gate-length device with a current gain cutoff frequency of 70 GHz was already achieved. In this study we investigated insulated-gate HEMTs using a SiN gate insulator formed by catalytic chemical vapor deposition (Cat-CVD). Compared with Schottky-gate HEMTs, large gate bias swing was achieved due to the insulated-gate structure, and superior DC device characteristics were obtained. RF device characteristics of the insulated-gate devices, however, were relatively inferior to the Schottky-gate devices. Electrical properties of the insulated-gate HEMT structure were studied with capacitance-voltage (C-V) measurements, and the C-V characteristics demonstrated that two electron transport channels existed, one at the SiGe/Si buried channel and the other at the SiN/Si surface channel. To improve RF device characteristics of insulated-gate SiGe/Si HEMTs, it is required to optimize the device design including HEMT epitaxial structures.
Keyword (in Japanese) (See Japanese page) 
(in English) silicon germanium (SiGe) / high electron mobility transistor (HEMT) / insulated gate / silicon nitride (SiN) / catalytic chemical vapor deposition (Cat-CVD) / capacitance-voltage measurement (C-V) / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 355, ED2007-187, pp. 1-5, Nov. 2007.
Paper # ED2007-187 
Date of Issue 2007-11-20 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-187

Conference Information
Committee ED  
Conference Date 2007-11-27 - 2007-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Tohoku Univ. Research Institute of Electrical Communication 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2007-11-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Research on SiGe/Si HEMT for millimeter-wave band operation 
Sub Title (in English)  
Keyword(1) silicon germanium (SiGe)  
Keyword(2) high electron mobility transistor (HEMT)  
Keyword(3) insulated gate  
Keyword(4) silicon nitride (SiN)  
Keyword(5) catalytic chemical vapor deposition (Cat-CVD)  
Keyword(6) capacitance-voltage measurement (C-V)  
Keyword(7)  
Keyword(8)  
1st Author's Name Norio Onojima  
1st Author's Affiliation National Institute of Information and Communications Technology (NICT)
2nd Author's Name Akifumi Kasamatsu  
2nd Author's Affiliation National Institute of Information and Communications Technology (NICT)
3rd Author's Name Nobumitsu Hirose  
3rd Author's Affiliation National Institute of Information and Communications Technology (NICT)
4th Author's Name Takashi Mimura  
4th Author's Affiliation National Institute of Information and Communications Technology (NICT)
5th Author's Name Toshiaki Matsui  
5th Author's Affiliation National Institute of Information and Communications Technology (NICT)
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Speaker Author-1 
Date Time 2007-11-27 13:30:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-187 
Volume (vol) vol.107 
Number (no) no.355 
Page pp.1-5 
#Pages 5 
Date of Issue 2007-11-20 (ED) 

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