Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2007-12-14 14:10
Axial orientation of epitaxially grown Fe3Si on Ge(111)
Yusuke Hiraiwa (Kyoto Univ.), Yu-ichiro Ando, Mamoru Kumano, Koji Ueda, Taizoh Sadoh, Masanobu Miyao (Kyushu Univ.), Kazumasa Narumi (JAEA), Yoshihito Maeda (Kyoto Univ.) SDM2007-230
Abstract (in Japanese) (See Japanese page) 
(in English) The axial orientation of epitaxially grown Fe3Si on Ge(111) has been investigated by Rutherford Backscattering spectroscopy. It has been reported that the axial orientation is highly dependent on growth temperature (TG), and that the degradation of axial orientation is caused above TG=200oC. In this study, we have investigated the axial orientation of Fe3Si/Ge(111) grown at 200oC by electron diffraction and measurement of channel dip curves. We found that the degradation of axial orientation observed at TG=200oC was attributed mainly to the tilt of Fe3Si<111> axis.
Keyword (in Japanese) (See Japanese page) 
(in English) Epitaxial growth / Fe3Si / Rutherford backscattering spectroscopy / Electron diffraction / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 388, SDM2007-230, pp. 35-38, Dec. 2007.
Paper # SDM2007-230 
Date of Issue 2007-12-07 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2007-230

Conference Information
Committee SDM  
Conference Date 2007-12-14 - 2007-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Nara Institute Science and Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Silicon related material, process and device 
Paper Information
Registration To SDM 
Conference Code 2007-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Axial orientation of epitaxially grown Fe3Si on Ge(111) 
Sub Title (in English)  
Keyword(1) Epitaxial growth  
Keyword(2) Fe3Si  
Keyword(3) Rutherford backscattering spectroscopy  
Keyword(4) Electron diffraction  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Yusuke Hiraiwa  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Yu-ichiro Ando  
2nd Author's Affiliation Kyushu University (Kyushu Univ.)
3rd Author's Name Mamoru Kumano  
3rd Author's Affiliation Kyushu University (Kyushu Univ.)
4th Author's Name Koji Ueda  
4th Author's Affiliation Kyushu University (Kyushu Univ.)
5th Author's Name Taizoh Sadoh  
5th Author's Affiliation Kyushu University (Kyushu Univ.)
6th Author's Name Masanobu Miyao  
6th Author's Affiliation Kyushu University (Kyushu Univ.)
7th Author's Name Kazumasa Narumi  
7th Author's Affiliation Japan Atomic Energy Agency (JAEA)
8th Author's Name Yoshihito Maeda  
8th Author's Affiliation Kyoto University (Kyoto Univ.)
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2007-12-14 14:10:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2007-230 
Volume (vol) vol.107 
Number (no) no.388 
Page pp.35-38 
#Pages 4 
Date of Issue 2007-12-07 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan