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Paper Abstract and Keywords
Presentation 2007-12-14 11:20
Electrical conduction characteristics of NiO thin films for ReRAM
Ryota Suzuki, Jun Suda, Tsunenobu Kimoto (Kyoto Univ.) SDM2007-226
Abstract (in Japanese) (See Japanese page) 
(in English) Since NiO thin films have resistive switching characteristics, NiO is one of the attractive materials for ReRAM. In this study, samples with Pt/NiO/Pt stack structures were fabricated on p-Si substrates. I-V measurements were carried out in high-resistance state (HRS) and low-resistance state (LRS) in the wide temperature range from 100K to 573K. In HRS, while the resistance was almost independent of temperature below 250K, the resistance was decreased with an activation energy of 0.30 eV above 250K. Hopping conduction and band conduction may be dominant in the low and high temperature range, respectively, in HRS. On the other hand, the LRS resistance was almost independent of the temperature or slightly increased in the whole temperature range. This temperature dependence of LRS resistance is very similar to that of an Ni thin film deposited by RF sputtering. The Pt/NiO/Pt structure exhibited stable resistive switching characteristics at temperature as high as 250ºC or even higher. Since other competitive nonvolatile memories will face severe difficulty in high-temperature operation, the present ReRAM shows promise for high-temperature application.
Keyword (in Japanese) (See Japanese page) 
(in English) NiO / ReRAM / Hopping conduction / Band conduction / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 388, SDM2007-226, pp. 19-22, Dec. 2007.
Paper # SDM2007-226 
Date of Issue 2007-12-07 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2007-12-14 - 2007-12-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Nara Institute Science and Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Silicon related material, process and device 
Paper Information
Registration To SDM 
Conference Code 2007-12-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical conduction characteristics of NiO thin films for ReRAM 
Sub Title (in English)  
Keyword(1) NiO  
Keyword(2) ReRAM  
Keyword(3) Hopping conduction  
Keyword(4) Band conduction  
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1st Author's Name Ryota Suzuki  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Jun Suda  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Tsunenobu Kimoto  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
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Speaker Author-1 
Date Time 2007-12-14 11:20:00 
Presentation Time 20 minutes 
Registration for SDM 
Paper # SDM2007-226 
Volume (vol) vol.107 
Number (no) no.388 
Page pp.19-22 
#Pages 4 
Date of Issue 2007-12-07 (SDM) 

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