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Paper Abstract and Keywords
Presentation 2008-01-16 13:50
Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs
Toshiharu Marui, Shinichi Hoshi, Yoshiaki Morino, Masanori Itoh, Isao Tamai, Fumihiko Toda, Hideyuki Okita, Yoshiaki Sano, Shohei Seki (OKI) ED2007-208 MW2007-139
Abstract (in Japanese) (See Japanese page) 
(in English) In AlGaN/GaN HEMTs, we used a thermal CVD SiN surface passivation film for suppressing the current collapse due to AlGaN surface level. We expected that the AlGaN surface state could be improved by the thermal CVD passivation film because of its low hydrogen content and high density. NH3 surface cleaning of 800℃ before SiN film deposition is also effective for improving AlGaN surface state. In this study we investigated the effect of the passivation film’s quality on the electrical characteristics of AlGaN/GaN HEMTs. As a result of our experiment, we found that gate leakage current and current collapse was suppressed by using the thermal CVD SiN passivation film.
Keyword AlGaN, GaN, PE-CVD, thermal CVD, SiN, current collapse
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN / GaN / PE-CVD / thermal CVD / SiN / current collapse / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 420, ED2007-208, pp. 11-15, Jan. 2008.
Paper # ED2007-208 
Date of Issue 2008-01-09 (ED, MW) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-208 MW2007-139

Conference Information
Committee ED MW  
Conference Date 2008-01-16 - 2008-01-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Compound Semiconductor IC, High-speed and high-frequency devices 
Paper Information
Registration To ED 
Conference Code 2008-01-ED-MW 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Effects of a thermal CVD SiN passivation film on electrical characteristics of AlGaN/GaN HEMTs 
Sub Title (in English)  
Keyword(1) AlGaN  
Keyword(2) GaN  
Keyword(3) PE-CVD  
Keyword(4) thermal CVD  
Keyword(5) SiN  
Keyword(6) current collapse  
Keyword(7)  
Keyword(8)  
1st Author's Name Toshiharu Marui  
1st Author's Affiliation OKI Electric Industry (OKI)
2nd Author's Name Shinichi Hoshi  
2nd Author's Affiliation OKI Electric Industry (OKI)
3rd Author's Name Yoshiaki Morino  
3rd Author's Affiliation OKI Electric Industry (OKI)
4th Author's Name Masanori Itoh  
4th Author's Affiliation OKI Electric Industry (OKI)
5th Author's Name Isao Tamai  
5th Author's Affiliation OKI Electric Industry (OKI)
6th Author's Name Fumihiko Toda  
6th Author's Affiliation OKI Electric Industry (OKI)
7th Author's Name Hideyuki Okita  
7th Author's Affiliation OKI Electric Industry (OKI)
8th Author's Name Yoshiaki Sano  
8th Author's Affiliation OKI Electric Industry (OKI)
9th Author's Name Shohei Seki  
9th Author's Affiliation OKI Electric Industry (OKI)
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Speaker Author-1 
Date Time 2008-01-16 13:50:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-208, MW2007-139 
Volume (vol) vol.107 
Number (no) no.420(ED), no.421(MW) 
Page pp.11-15 
#Pages 5 
Date of Issue 2008-01-09 (ED, MW) 

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