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| 講演名 | 2008-01-30 14:45 Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer ○Daniel Moraru・Daisuke Nagata・Kiyohito Yokoi・Hiroya Ikeda・Michiharu Tabe（Shizuoka Univ.）  ED2007-240 SDM2007-251 |
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| 抄録 | （和） | Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce potential fluctuations that modify the electrical behavior of the device. Furthermore, as device dimensions are scaled down, quantum effects such as the Coulomb blockade and single-electron tunneling strongly influence electron transport through doped Si nanowires. We have previously proved that dopant-induced potential fluctuations essentially act as quantum dots, which confine individual charges and thus provide control over electron transfer down to a single electron per gate voltage cycle. However, because in the conventional doping techniques the position and number of dopants in the channel cannot be known with absolute accuracy, experimental and analytical studies of a variety of conditions for dopant arrays are called for. We have investigated the dc-gate behavior of single-gated SOI FETs with different doping concentrations and channel sizes and our results provide some guidelines for choosing the appropriate conditions to enhance the Coulomb blockade effect. We have also extended our analytical investigation of single-electron transfer in few-quantum-dots arrays. This new analysis suggests that single-electron transfer operation is achievable with high probability in one-dimensional quantum dot arrays with fairly large dispersion of dot sizes, as would be expected for randomly-doped-channel FETs. Even more, this study allows us to discriminate the most favorable quantum dot arrangements, while also giving an insight into the single-electron transfer mechanism in such random systems. |
| （英） | Randomly distributed dopants in the channel of silicon-on-insulator (SOI) field-effect transistors (FETs) can introduce potential fluctuations that modify the electrical behavior of the device. Furthermore, as device dimensions are scaled down, quantum effects such as the Coulomb blockade and single-electron tunneling strongly influence electron transport through doped Si nanowires. We have previously proved that dopant-induced potential fluctuations essentially act as quantum dots, which confine individual charges and thus provide control over electron transfer down to a single electron per gate voltage cycle. However, because in the conventional doping techniques the position and number of dopants in the channel cannot be known with absolute accuracy, experimental and analytical studies of a variety of conditions for dopant arrays are called for. We have investigated the dc-gate behavior of single-gated SOI FETs with different doping concentrations and channel sizes and our results provide some guidelines for choosing the appropriate conditions to enhance the Coulomb blockade effect. We have also extended our analytical investigation of single-electron transfer in few-quantum-dots arrays. This new analysis suggests that single-electron transfer operation is achievable with high probability in one-dimensional quantum dot arrays with fairly large dispersion of dot sizes, as would be expected for randomly-doped-channel FETs. Even more, this study allows us to discriminate the most favorable quantum dot arrangements, while also giving an insight into the single-electron transfer mechanism in such random systems. | |
| キーワード | （和） | dopant-induced quantum dots / Coulomb blockade / single-electron tunneling / single-electron transfer / / / / |
| （英） | dopant-induced quantum dots / Coulomb blockade / single-electron tunneling / single-electron transfer / / / / | |
| 文献情報 | 信学技報, vol. 107, no. 474, SDM2007-251, pp. 17-22, 2008年1月. | |
| 資料番号 | SDM2007-251 | |
| 発行日 | 2008-01-23 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| 著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します．(許諾番号：10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| PDFダウンロード | ED2007-240 SDM2007-251 |
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| 研究会情報 | |
| 研究会 | ED SDM |
| 開催期間 | 2008-01-30 - 2008-01-31 |
| 開催地（和） | 北海道大学 |
| 開催地（英） | |
| テーマ（和） | 機能ナノデバイスとおよび関連技術 |
| テーマ（英） | |
| 講演論文情報の詳細 | |
| 申込み研究会 | SDM |
| 会議コード | 2008-01-ED-SDM |
| 本文の言語 | 英語 |
| タイトル（和） | |
| サブタイトル（和） | |
| タイトル（英） | Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer |
| サブタイトル（英） | |
| キーワード(1)（和/英） | dopant-induced quantum dots / dopant-induced quantum dots |
| キーワード(2)（和/英） | Coulomb blockade / Coulomb blockade |
| キーワード(3)（和/英） | single-electron tunneling / single-electron tunneling |
| キーワード(4)（和/英） | single-electron transfer / single-electron transfer |
| キーワード(5)（和/英） | / |
| キーワード(6)（和/英） | / |
| キーワード(7)（和/英） | / |
| キーワード(8)（和/英） | / |
| 第1著者 氏名（和/英/ヨミ） | Daniel Moraru / Daniel Moraru / |
| 第1著者 所属（和/英） | Shizuoka University (略称： 静岡大) Shizuoka University (略称： Shizuoka Univ.) |
| 第2著者 氏名（和/英/ヨミ） | Daisuke Nagata / Daisuke Nagata / |
| 第2著者 所属（和/英） | Shizuoka University (略称： 静岡大) Shizuoka University (略称： Shizuoka Univ.) |
| 第3著者 氏名（和/英/ヨミ） | Kiyohito Yokoi / Kiyohito Yokoi / |
| 第3著者 所属（和/英） | Shizuoka University (略称： 静岡大) Shizuoka University (略称： Shizuoka Univ.) |
| 第4著者 氏名（和/英/ヨミ） | Hiroya Ikeda / Hiroya Ikeda / |
| 第4著者 所属（和/英） | Shizuoka University (略称： 静岡大) Shizuoka University (略称： Shizuoka Univ.) |
| 第5著者 氏名（和/英/ヨミ） | Michiharu Tabe / Michiharu Tabe / |
| 第5著者 所属（和/英） | Shizuoka University (略称： 静岡大) Shizuoka University (略称： Shizuoka Univ.) |
| 講演者 | 第1著者 |
| 発表日時 | 2008-01-30 14:45:00 |
| 発表時間 | 25分 |
| 申込先研究会 | SDM |
| 資料番号 | ED2007-240, SDM2007-251 |
| 巻番号（vol） | vol.107 |
| 号番号（no） | no.473(ED), no.474(SDM) |
| ページ範囲 | pp.17-22 |
| ページ数 | 6 |
| 発行日 | 2008-01-23 (ED, SDM) |
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