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Paper Abstract and Keywords
Presentation 2008-01-30 13:55
Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE
Jinichiro Noborisaka, Takuya Sato, Junichi Motohisa, Shinjiro Hara, Takashi Fukui (Hokkaido Univ.) ED2007-238 SDM2007-249
Abstract (in Japanese) (See Japanese page) 
(in English) Semiconductor nanowires are attracting much attention as a new class of nanoscale materials. Particularly, vertical surrounding gate FETs, which is a one of the useful applications utilizing semiconductor nanowires, have been expected to show superior transconductance, high current on-off (Ion/off) ratio and reduced short channel effects compared with conventional planar type FETs. In experiment, Silicon-doped n-InGaAs nanowires were grown by catalyst-free selective-area metal-organic vapor-phase epitaxy (SA-MOVPE). The nanowire FETs with MIS back-gate and 80 % coverage MES top-gate on SiO2-coated Si substrates were fabricated and characterized by defining metal contacts at both ends of the nanowires and the Al top-gate between contacts.
Keyword (in Japanese) (See Japanese page) 
(in English) nanowire / nano-FET / MOVPE / selective area growth / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 473, ED2007-238, pp. 5-10, Jan. 2008.
Paper # ED2007-238 
Date of Issue 2008-01-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-238 SDM2007-249

Conference Information
Committee ED SDM  
Conference Date 2008-01-30 - 2008-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2008-01-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Electrical characterizations of InGaAs related nanowires grown by selective-area MOVPE 
Sub Title (in English)  
Keyword(1) nanowire  
Keyword(2) nano-FET  
Keyword(3) MOVPE  
Keyword(4) selective area growth  
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1st Author's Name Jinichiro Noborisaka  
1st Author's Affiliation Hokkaido University (Hokkaido Univ.)
2nd Author's Name Takuya Sato  
2nd Author's Affiliation Hokkaido University (Hokkaido Univ.)
3rd Author's Name Junichi Motohisa  
3rd Author's Affiliation Hokkaido University (Hokkaido Univ.)
4th Author's Name Shinjiro Hara  
4th Author's Affiliation Hokkaido University (Hokkaido Univ.)
5th Author's Name Takashi Fukui  
5th Author's Affiliation Hokkaido University (Hokkaido Univ.)
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Speaker Author-1 
Date Time 2008-01-30 13:55:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-238, SDM2007-249 
Volume (vol) vol.107 
Number (no) no.473(ED), no.474(SDM) 
Page pp.5-10 
#Pages 6 
Date of Issue 2008-01-23 (ED, SDM) 

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