Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-01-31 12:05
Single-electron circuit for stochastic data processing using nano-MOSFETs
Katsuhiko Nishiguchi, Akira Fujiwara (NTT BRL) ED2007-251 SDM2007-262
Abstract (in Japanese) (See Japanese page) 
(in English) A MOSFET-based circuit utilizing single electrons is demonstrated at room temperature. Individual electrons randomly passing through the nanoscale silicon-on-insulator MOSFET are monitored by an electrometer in real time. Such a random behavior of single electrons is used for random-number generation suitable for a data processing which stochastically extracts the optimum solution among various ones. The use of electron transport in MOSFETs provides high controllability of the randomness, which prevents extracted solutions from staying at undesirable local minimum, as well as fast generation of random numbers. The present result promises new single-electron applications using nanoscale MOSFETs.
Keyword (in Japanese) (See Japanese page) 
(in English) Single electron / Si MOSFET / Stochastic data processing / / / / /  
Reference Info. IEICE Tech. Rep., vol. 107, no. 473, ED2007-251, pp. 75-79, Jan. 2008.
Paper # ED2007-251 
Date of Issue 2008-01-23 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2007-251 SDM2007-262

Conference Information
Committee ED SDM  
Conference Date 2008-01-30 - 2008-01-31 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ED 
Conference Code 2008-01-ED-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Single-electron circuit for stochastic data processing using nano-MOSFETs 
Sub Title (in English) * 
Keyword(1) Single electron  
Keyword(2) Si MOSFET  
Keyword(3) Stochastic data processing  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Katsuhiko Nishiguchi  
1st Author's Affiliation NTT Basic Research laboratories (NTT BRL)
2nd Author's Name Akira Fujiwara  
2nd Author's Affiliation NTT Basic Research laboratories (NTT BRL)
3rd Author's Name  
3rd Author's Affiliation ()
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-01-31 12:05:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2007-251, SDM2007-262 
Volume (vol) vol.107 
Number (no) no.473(ED), no.474(SDM) 
Page pp.75-79 
#Pages 5 
Date of Issue 2008-01-23 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan