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Paper Abstract and Keywords
Presentation 2008-04-18 13:05
[Invited Talk] 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers
Ryuji Ohba, Yuichiro Mitani, Naoharu Sugiyama, Shinobu Fujita (Toshiba) ICD2008-11
Abstract (in Japanese) (See Japanese page) 
(in English) 15nm gate length bulk-planar SONOS-type memory device, which has Si nanocrystal layer lying between double tunnel oxides, retains 2.7 decades memory window for 10 years be-low 10V write / erase (w/e) voltages. S-factor is controlled by source/drain (S/D) junction depth and channel concentration. It is experimentally shown that S to D direct tunneling deter-mines a physical limit of S-factor control below 15 nm scale. Further device scaling and improvement by Si nanocrystal scaling are possible within the limit of S-factor control..
Keyword (in Japanese) (See Japanese page) 
(in English) Si nanocrystal / Quantum dot / Flash memory / SONOS / MONOS / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 6, ICD2008-11, pp. 57-62, April 2008.
Paper # ICD2008-11 
Date of Issue 2008-04-10 (ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee ICD  
Conference Date 2008-04-17 - 2008-04-18 
Place (in Japanese) (See Japanese page) 
Place (in English)  
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To ICD 
Conference Code 2008-04-ICD 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) 15nm Planar Bulk SONOS-type Memory with Double Junstion Tunnel Layers 
Sub Title (in English)  
Keyword(1) Si nanocrystal  
Keyword(2) Quantum dot  
Keyword(3) Flash memory  
Keyword(4) SONOS  
Keyword(5) MONOS  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Ryuji Ohba  
1st Author's Affiliation Toshiba Co. (Toshiba)
2nd Author's Name Yuichiro Mitani  
2nd Author's Affiliation Toshiba Co. (Toshiba)
3rd Author's Name Naoharu Sugiyama  
3rd Author's Affiliation Toshiba Co. (Toshiba)
4th Author's Name Shinobu Fujita  
4th Author's Affiliation Toshiba Co. (Toshiba)
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Speaker Author-1 
Date Time 2008-04-18 13:05:00 
Presentation Time 50 minutes 
Registration for ICD 
Paper # ICD2008-11 
Volume (vol) vol.108 
Number (no) no.6 
Page pp.57-62 
#Pages 6 
Date of Issue 2008-04-10 (ICD) 

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