Paper Abstract and Keywords |
Presentation |
2008-05-16 14:40
Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition Hidenori Ono, Kazuya Ogawa, Masashi Kato, Masaya Ichimura (Nagoya Inst. of Tech.) ED2008-19 CPM2008-27 SDM2008-39 Link to ES Tech. Rep. Archives: ED2008-19 CPM2008-27 SDM2008-39 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC Schottky Diodes are promising for application of high-power and high-frequency rectifiers.However it is reported that the forward bias property is unstable between diodes because of inhomogeneity of Schottky barrier height.We observed regions with a low Schottky barrier height on 4H-SiC surface by the electrochemical deposition of ZnO.After removing ZnO,we fabricated Ni Schottky diodes on the position with and without deposited ZnO films.Then,we compared the Schottky barrier height of the diodes fabricated on the position with and without deposited ZnO films.Schottky barrier heights of Schottky Diodes fabricated on the position of a deposited ZnO film were lower than the one fabricated on the position of no deposited ZnO films.Molten salt etching reveal that approximately half of the ZnO films were deposited on the position of etch pit , while other films were deposited on the position of no etch pit. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
4H-SiC / Schottky barrier height / defect / electrochemical deposition / ZnO / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 34, ED2008-19, pp. 89-94, May 2008. |
Paper # |
ED2008-19 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
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ED2008-19 CPM2008-27 SDM2008-39 Link to ES Tech. Rep. Archives: ED2008-19 CPM2008-27 SDM2008-39 |
Conference Information |
Committee |
CPM ED SDM |
Conference Date |
2008-05-15 - 2008-05-16 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Crystal growth, evaluation and device (Compound, Si, SiGe, Electronic and light emitting materials) |
Paper Information |
Registration To |
ED |
Conference Code |
2008-05-CPM-ED-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Observation Method of Variation in Barrier Height in 4H-SiC Schottky Diodes Using the Electrochemical Deposition |
Sub Title (in English) |
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Keyword(1) |
4H-SiC |
Keyword(2) |
Schottky barrier height |
Keyword(3) |
defect |
Keyword(4) |
electrochemical deposition |
Keyword(5) |
ZnO |
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1st Author's Name |
Hidenori Ono |
1st Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
2nd Author's Name |
Kazuya Ogawa |
2nd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
3rd Author's Name |
Masashi Kato |
3rd Author's Affiliation |
Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
4th Author's Name |
Masaya Ichimura |
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Nagoya Institute of Technology (Nagoya Inst. of Tech.) |
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Speaker |
Author-1 |
Date Time |
2008-05-16 14:40:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-19, CPM2008-27, SDM2008-39 |
Volume (vol) |
vol.108 |
Number (no) |
no.34(ED), no.35(CPM), no.36(SDM) |
Page |
pp.89-94 |
#Pages |
6 |
Date of Issue |
2008-05-08 (ED, CPM, SDM) |
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