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Paper Abstract and Keywords
Presentation 2008-06-10 11:20
XPS Study of TiAlN/HfSiON Gate Stack -- Reduction of Effective Work Function Change Induced by Al Diffusion --
Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52
Abstract (in Japanese) (See Japanese page) 
(in English) ~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000ºC. After complete removal of Si(100) substrate, the chemical bonding features and effective work function of TiAlN or TiN gate were directly evaluated through the dielectric layer from the back side by high-resolution X-ray photoelectron spectroscopy (XPS). And we found that the effective work function of TiAlN on HfSiON/SiO2(1nm) was decreased by 90meV from 4.80 with 1000ºC anneal while the effective work function value of TiN on HfSiON was decreased down to 4.51eV by 1000ºC anneal. The result implies that Al diffusion into HfSiON from TiAlN gate plays a role on the suppression of the work function change with 1000ºC anneal. In fact, the analyses of core-line spectra of TiAlN/HfSiON stack structure confirm that a decrease of Ti-Al-N bonding units and an increase of Al-O bonding units by 1000ºC anneal. Thus, the effective suppression of work function change by using the TiAlN gate can be interpreted in terms of the diffusion and incorporation of Al and N atoms into the HfSiON layer.
Keyword (in Japanese) (See Japanese page) 
(in English) Metal/High-k Gate Stack / TiAlN / HfSiON / Effective Work Function / X-ray photoelectron spectroscopy / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 80, SDM2008-52, pp. 59-64, June 2008.
Paper # SDM2008-52 
Date of Issue 2008-06-02 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM  
Conference Date 2008-06-09 - 2008-06-10 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402, Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2008-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) XPS Study of TiAlN/HfSiON Gate Stack 
Sub Title (in English) Reduction of Effective Work Function Change Induced by Al Diffusion 
Keyword(1) Metal/High-k Gate Stack  
Keyword(2) TiAlN  
Keyword(3) HfSiON  
Keyword(4) Effective Work Function  
Keyword(5) X-ray photoelectron spectroscopy  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Akio Ohta  
1st Author's Affiliation Hiroshima University (Hiroshima Univ.)
2nd Author's Name Taiki Mori  
2nd Author's Affiliation Hiroshima University (Hiroshima Univ.)
3rd Author's Name Hiromichi Yoshinaga  
3rd Author's Affiliation Hiroshima University (Hiroshima Univ.)
4th Author's Name Seiichi Miyazaki  
4th Author's Affiliation Hiroshima University (Hiroshima Univ.)
5th Author's Name Masaru Kadoshima  
5th Author's Affiliation Semiconductor Leading Edge Technologies. Inc (Selete)
6th Author's Name Yasuo Nara  
6th Author's Affiliation Semiconductor Leading Edge Technologies. Inc (Selete)
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Speaker Author-1 
Date Time 2008-06-10 11:20:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-52 
Volume (vol) vol.108 
Number (no) no.80 
Page pp.59-64 
#Pages 6 
Date of Issue 2008-06-02 (SDM) 

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