Paper Abstract and Keywords |
Presentation |
2008-06-10 11:20
XPS Study of TiAlN/HfSiON Gate Stack
-- Reduction of Effective Work Function Change Induced by Al Diffusion -- Akio Ohta, Taiki Mori, Hiromichi Yoshinaga, Seiichi Miyazaki (Hiroshima Univ.), Masaru Kadoshima, Yasuo Nara (Selete) SDM2008-52 Link to ES Tech. Rep. Archives: SDM2008-52 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
~30nm-thick TiAlN and TiN gate were deposited on HfSiON/SiO2/Si(100) stack structure and followed by anneal at 1000ºC. After complete removal of Si(100) substrate, the chemical bonding features and effective work function of TiAlN or TiN gate were directly evaluated through the dielectric layer from the back side by high-resolution X-ray photoelectron spectroscopy (XPS). And we found that the effective work function of TiAlN on HfSiON/SiO2(1nm) was decreased by 90meV from 4.80 with 1000ºC anneal while the effective work function value of TiN on HfSiON was decreased down to 4.51eV by 1000ºC anneal. The result implies that Al diffusion into HfSiON from TiAlN gate plays a role on the suppression of the work function change with 1000ºC anneal. In fact, the analyses of core-line spectra of TiAlN/HfSiON stack structure confirm that a decrease of Ti-Al-N bonding units and an increase of Al-O bonding units by 1000ºC anneal. Thus, the effective suppression of work function change by using the TiAlN gate can be interpreted in terms of the diffusion and incorporation of Al and N atoms into the HfSiON layer. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
Metal/High-k Gate Stack / TiAlN / HfSiON / Effective Work Function / X-ray photoelectron spectroscopy / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 80, SDM2008-52, pp. 59-64, June 2008. |
Paper # |
SDM2008-52 |
Date of Issue |
2008-06-02 (SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
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SDM2008-52 Link to ES Tech. Rep. Archives: SDM2008-52 |
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