Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-06-10 09:30
Transconductance enhancement of strained-Si nanowire FETs
Aya Seike, Tomoyuki Tange, Itsutaku Sano, Yuuki Sugiura, Ikushin Tsuchida, Hiromichi Ohta, Takanobu Watanabe (Waseda Univ.), Daisuke Kosemura, Atsushi Ogura (Meiji Univ.), Iwao Ohdomari (Waseda Univ.) SDM2008-48
Abstract (in Japanese) (See Japanese page) 
(in English) We have demonstrated improved performance for Si nanowire FETs for CMOS operation by introducing tensile stress into the Si nanowires. Nanowires oxidized at 850℃ for 3h exhibited the largest transconductance (gm) by a factor of 1.5 in p-type nanowire FETs (n-nwFETs) and 3.0 in n-type nanowire FETs, with respect to those oxidized at 850℃ for 1h. The higher value of gm for p-type nanowire FETs (p-nwFETs) is strongly enhanced by the channel direction of the device. gm for p-type nanowire FETs is enhance by a factor of 1.29 in <110> devices compared with <100> devices. The additional enhancement in p-type nwFETs at higher Vds is due to the anisotropy of hole drift velocity with respect to the orientation of channel.
Keyword (in Japanese) (See Japanese page) 
(in English) nanowire / transistors / transconductance / strain / CMOS / UV Raman / MD simulation /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 80, SDM2008-48, pp. 35-39, June 2008.
Paper # SDM2008-48 
Date of Issue 2008-06-02 (SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-48

Conference Information
Committee SDM  
Conference Date 2008-06-09 - 2008-06-10 
Place (in Japanese) (See Japanese page) 
Place (in English) An401・402, Inst. Indus. Sci., The Univ. of Tokyo 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Science and Sci. & Technol. for Thin Dielectrics for MIS Devices 
Paper Information
Registration To SDM 
Conference Code 2008-06-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Transconductance enhancement of strained-Si nanowire FETs 
Sub Title (in English)  
Keyword(1) nanowire  
Keyword(2) transistors  
Keyword(3) transconductance  
Keyword(4) strain  
Keyword(5) CMOS  
Keyword(6) UV Raman  
Keyword(7) MD simulation  
Keyword(8)  
1st Author's Name Aya Seike  
1st Author's Affiliation Waseda University (Waseda Univ.)
2nd Author's Name Tomoyuki Tange  
2nd Author's Affiliation Waseda University (Waseda Univ.)
3rd Author's Name Itsutaku Sano  
3rd Author's Affiliation Waseda University (Waseda Univ.)
4th Author's Name Yuuki Sugiura  
4th Author's Affiliation Waseda University (Waseda Univ.)
5th Author's Name Ikushin Tsuchida  
5th Author's Affiliation Waseda University (Waseda Univ.)
6th Author's Name Hiromichi Ohta  
6th Author's Affiliation Waseda University (Waseda Univ.)
7th Author's Name Takanobu Watanabe  
7th Author's Affiliation Waseda University (Waseda Univ.)
8th Author's Name Daisuke Kosemura  
8th Author's Affiliation Meiji University (Meiji Univ.)
9th Author's Name Atsushi Ogura  
9th Author's Affiliation Meiji University (Meiji Univ.)
10th Author's Name Iwao Ohdomari  
10th Author's Affiliation Waseda University (Waseda Univ.)
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-06-10 09:30:00 
Presentation Time 25 minutes 
Registration for SDM 
Paper # SDM2008-48 
Volume (vol) vol.108 
Number (no) no.80 
Page pp.35-39 
#Pages 6 
Date of Issue 2008-06-02 (SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan