Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-06-13 14:15
Characterization of N-doped AlSiO film for wide bandgap semiconductors
Naoyoshi Komatsu, Hirotaka Tanaka, Hidemitsu Aoki, Keiko Matsunouchi, Chiharu Kimura (Osaka Univ.), Yukihiko Okumura (Maizuru National Col. of Tech.), Takashi Sugino (Osaka Univ.) ED2008-25
Abstract (in Japanese) (See Japanese page) 
(in English) A gate insulator film with a wide bandgap and a high dielectric constant is required to achieve high power field effect transistor (FET) using wide bandgap semiconductors such as SiC, GaN and diamond. We found that the leakage current of N-doped AlSiO film can be suppressed in high temperature region compared with AlSiO film. This result suggests that the AlSiON film can be applied to wide bandgap semiconductor devices for high temperature operation.
Keyword (in Japanese) (See Japanese page) 
(in English) wide bandgap / high temperature operation / power device / high-k / MOS-FET / leakage current / N doping /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 87, ED2008-25, pp. 17-22, June 2008.
Paper # ED2008-25 
Date of Issue 2008-06-06 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-25

Conference Information
Committee ED  
Conference Date 2008-06-13 - 2008-06-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology od semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2008-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Characterization of N-doped AlSiO film for wide bandgap semiconductors 
Sub Title (in English)  
Keyword(1) wide bandgap  
Keyword(2) high temperature operation  
Keyword(3) power device  
Keyword(4) high-k  
Keyword(5) MOS-FET  
Keyword(6) leakage current  
Keyword(7) N doping  
Keyword(8)  
1st Author's Name Naoyoshi Komatsu  
1st Author's Affiliation Osaka University (Osaka Univ.)
2nd Author's Name Hirotaka Tanaka  
2nd Author's Affiliation Osaka University (Osaka Univ.)
3rd Author's Name Hidemitsu Aoki  
3rd Author's Affiliation Osaka University (Osaka Univ.)
4th Author's Name Keiko Matsunouchi  
4th Author's Affiliation Osaka University (Osaka Univ.)
5th Author's Name Chiharu Kimura  
5th Author's Affiliation Osaka University (Osaka Univ.)
6th Author's Name Yukihiko Okumura  
6th Author's Affiliation Maizuru National College of Technology (Maizuru National Col. of Tech.)
7th Author's Name Takashi Sugino  
7th Author's Affiliation Osaka University (Osaka Univ.)
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-06-13 14:15:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-25 
Volume (vol) vol.108 
Number (no) no.87 
Page pp.17-22 
#Pages 6 
Date of Issue 2008-06-06 (ED) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan