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Paper Abstract and Keywords
Presentation 2008-06-14 09:00
InP HEMT device technology for ultra-high-speed MMIC
Naoki Hara, Tsuyoshi Takahashi, Kozo Makiyama (Fujitsu), Toshihiro Ohki (Fujitsu Lab) ED2008-32
Abstract (in Japanese) (See Japanese page) 
(in English) We have developed InP-based HEMT technology suitable for fabricating ultra-high-speed MMIC. Scaling of both vertical and lateral directions was investigated for enhancing transconductance, which enables us to realize high-speed characteristics without ultra-short-length gate electrodes. Parasitic capacitance originated from interlayer dielectric film for interconnection was reduced by using cavity structure, which was formed by removing the interlayer dielectric film around the gate electrodes. We successfully fabricated 45-nm gate InP HEMT with a cut-off frequency of 517 GHz by employing the above technologies.
Keyword (in Japanese) (See Japanese page) 
(in English) MMIC / InP-based HEMT / millimeter wave / scaling / cavity structure / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 87, ED2008-32, pp. 55-60, June 2008.
Paper # ED2008-32 
Date of Issue 2008-06-06 (ED) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-32

Conference Information
Committee ED  
Conference Date 2008-06-13 - 2008-06-14 
Place (in Japanese) (See Japanese page) 
Place (in English) Kanazawa University 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Process and device technology od semiconductors (surface, interface, reliability, etc.) 
Paper Information
Registration To ED 
Conference Code 2008-06-ED 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) InP HEMT device technology for ultra-high-speed MMIC 
Sub Title (in English)  
Keyword(1) MMIC  
Keyword(2) InP-based HEMT  
Keyword(3) millimeter wave  
Keyword(4) scaling  
Keyword(5) cavity structure  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Naoki Hara  
1st Author's Affiliation Fujitsu Ltd. (Fujitsu)
2nd Author's Name Tsuyoshi Takahashi  
2nd Author's Affiliation Fujitsu Ltd. (Fujitsu)
3rd Author's Name Kozo Makiyama  
3rd Author's Affiliation Fujitsu Ltd. (Fujitsu)
4th Author's Name Toshihiro Ohki  
4th Author's Affiliation Fujitsu Laboratories Ltd. (Fujitsu Lab)
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Speaker Author-1 
Date Time 2008-06-14 09:00:00 
Presentation Time 25 minutes 
Registration for ED 
Paper # ED2008-32 
Volume (vol) vol.108 
Number (no) no.87 
Page pp.55-60 
#Pages 6 
Date of Issue 2008-06-06 (ED) 

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