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Paper Abstract and Keywords
Presentation 2008-07-10 09:45
Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure
Sang-Su Park, Se Woong Oh, Kyeong Rok Kim, Hyun Joo Kim, Tae Whan Kim, Kae Dal Kwack (Hanyang Univ.) ED2008-57 SDM2008-76
Abstract (in Japanese) (See Japanese page) 
(in English) Unique two-bit/cell SONOS devices separated from the ONOs utilizing an advanced saddle structure with the separated gates, denoted by the advanced saddle SONOS (AS-SONOS) devices, were designed to increase storage density of the memory devices. The decrease in the charge distribution profile and the increase in the data retention time of the SONOS device were achieved due to the formation of the divided storage nitride layer. The program and the erase characteristics of the Fowler-Nordheim tunneling processes were estimated to verify unique two-bit/cell SONOS devices. The memory density, the reading speed, and the programming speeds of the proposed two-bit/cell SONOS increased due to an increase in the captured charge of the SONOS cell. These results indicate that the two-bit/cell SONOS devices designed by using the advanced saddle structure hold promise for potential applications in high-density nonvolatile memory devices.
Keyword (in Japanese) (See Japanese page) 
(in English) SONOS / advanced saddle / two-bit/cell / storage density / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-76, pp. 89-93, July 2008.
Paper # SDM2008-76 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
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reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
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Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu２・７ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Design of Unique two-bit/cell SONOS Flash Memory Device Utilizing an Advanced Saddle Structure 
Sub Title (in English)  
Keyword(1) SONOS  
Keyword(2) advanced saddle  
Keyword(3) two-bit/cell  
Keyword(4) storage density  
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1st Author's Name Sang-Su Park  
1st Author's Affiliation Hanyang University (Hanyang Univ.)
2nd Author's Name Se Woong Oh  
2nd Author's Affiliation Hanyang University (Hanyang Univ.)
3rd Author's Name Kyeong Rok Kim  
3rd Author's Affiliation Hanyang University (Hanyang Univ.)
4th Author's Name Hyun Joo Kim  
4th Author's Affiliation Hanyang University (Hanyang Univ.)
5th Author's Name Tae Whan Kim  
5th Author's Affiliation Hanyang University (Hanyang Univ.)
6th Author's Name Kae Dal Kwack  
6th Author's Affiliation Hanyang University (Hanyang Univ.)
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Speaker Author-1 
Date Time 2008-07-10 09:45:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-57, SDM2008-76 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.89-93 
#Pages 5 
Date of Issue 2008-07-02 (ED, SDM) 

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