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| 講演名 | 2008-07-10 10:40 A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications ○Hyeok Jun Son・Il Woong Kwon（KAIST）・Ho Jun You（ETRI）・Yong Soo Lee・Hee Chul Lee（KAIST）  ED2008-68 SDM2008-87 |
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| 抄録 | （和） | We present Poly(3,4-ethylenedioxythiophene):Poly(Styrene sulfonate)(PEDOT:PSS) films for application in a bolometer, a kind of uncooled infrared image sensor. In order to maximize the sensitivity of an uncooled infrared image sensor, maximization of the temperature coefficient of resistance (TCR) and minimization of the 1/f noise of the sensing materials are required. While the material's resistivity should be large enough for higher TCR, it is widely known that large resistivity usually accompanies high 1/f noise. For this reason, traditional bolometric materials such as vanadium oxide, amorphous silicon and titanium, which respectively have a good ratio of TCR over noise, have been widely used. Numerous conducting polymers have been developed and studied in recent years. The PEDOT:PSS, an aqueous composite, is one of the most successful conducting polymers, and has found a broad range of applications including use in modified electrodes, solar cells, and electroluminescent devices. The film formation of PEDOT:PSS is easily obtained through the spin coating method. The resultant film has an amorphous crystalline structure that is known to have high TCR values. These interesting features suggest that the PEDOT:PSS film is applicable to microbolometer array fabrication. We demonstrated the TCR and 1/f noise dependencies of PEDOT:PSS thin films on the thermal treatment conditions. Thermal treatment was carried out in a temperature range of 200-350oC with time periods ranging from 5-100 minutes under the nitrogen ambient. It was found that the resistivity, and thereby the TCR and 1/f noise factor k, of the PEDOT:PSS can be modified by specific thermal treatment conditions. It was also showed that the appropriate heat treatment can suppress the 1/f noise of the PEDOT:PSS thin film while maintaining the resistivity and TCR. It was thus concluded that the PEDOT:PSS has potential for use as a bolometer material. This paper presents a performance evaluation and analysis of the PEDOT:PSS based bolometer on the basis of the figure of merit (TCR over Noise). An optimized figure of merit is also presented. |
| （英） | We present Poly(3,4-ethylenedioxythiophene):Poly(Styrene sulfonate)(PEDOT:PSS) films for application in a bolometer, a kind of uncooled infrared image sensor. In order to maximize the sensitivity of an uncooled infrared image sensor, maximization of the temperature coefficient of resistance (TCR) and minimization of the 1/f noise of the sensing materials are required. While the material's resistivity should be large enough for higher TCR, it is widely known that large resistivity usually accompanies high 1/f noise. For this reason, traditional bolometric materials such as vanadium oxide, amorphous silicon and titanium, which respectively have a good ratio of TCR over noise, have been widely used. Numerous conducting polymers have been developed and studied in recent years. The PEDOT:PSS, an aqueous composite, is one of the most successful conducting polymers, and has found a broad range of applications including use in modified electrodes, solar cells, and electroluminescent devices. The film formation of PEDOT:PSS is easily obtained through the spin coating method. The resultant film has an amorphous crystalline structure that is known to have high TCR values. These interesting features suggest that the PEDOT:PSS film is applicable to microbolometer array fabrication. We demonstrated the TCR and 1/f noise dependencies of PEDOT:PSS thin films on the thermal treatment conditions. Thermal treatment was carried out in a temperature range of 200-350oC with time periods ranging from 5-100 minutes under the nitrogen ambient. It was found that the resistivity, and thereby the TCR and 1/f noise factor k, of the PEDOT:PSS can be modified by specific thermal treatment conditions. It was also showed that the appropriate heat treatment can suppress the 1/f noise of the PEDOT:PSS thin film while maintaining the resistivity and TCR. It was thus concluded that the PEDOT:PSS has potential for use as a bolometer material. This paper presents a performance evaluation and analysis of the PEDOT:PSS based bolometer on the basis of the figure of merit (TCR over Noise). An optimized figure of merit is also presented. | |
| キーワード | （和） | Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) / Bolometer / TCR / 1/f noise / figure of merit / / / |
| （英） | Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) / Bolometer / TCR / 1/f noise / figure of merit / / / | |
| 文献情報 | 信学技報, vol. 108, no. 122, SDM2008-87, pp. 149-154, 2008年7月. | |
| 資料番号 | SDM2008-87 | |
| 発行日 | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| 著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します．(許諾番号：10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| PDFダウンロード | ED2008-68 SDM2008-87 |
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| 研究会情報 | |
| 研究会 | SDM ED |
| 開催期間 | 2008-07-09 - 2008-07-11 |
| 開催地（和） | かでる２・７（札幌） |
| 開催地（英） | Kaderu２・７ |
| テーマ（和） | 第16回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2008) |
| テーマ（英） | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| 講演論文情報の詳細 | |
| 申込み研究会 | SDM |
| 会議コード | 2008-07-SDM-ED |
| 本文の言語 | 英語 |
| タイトル（和） | |
| サブタイトル（和） | |
| タイトル（英） | A Study on Poly(3,4-ethylenedioxythiophene):Poly(styrene sulfonate) (PEDOT:PSS) Films for The Microbolometer Applications |
| サブタイトル（英） | |
| キーワード(1)（和/英） | Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) / Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) |
| キーワード(2)（和/英） | Bolometer / Bolometer |
| キーワード(3)（和/英） | TCR / TCR |
| キーワード(4)（和/英） | 1/f noise / 1/f noise |
| キーワード(5)（和/英） | figure of merit / figure of merit |
| キーワード(6)（和/英） | / |
| キーワード(7)（和/英） | / |
| キーワード(8)（和/英） | / |
| 第1著者 氏名（和/英/ヨミ） | Hyeok Jun Son / Hyeok Jun Son / |
| 第1著者 所属（和/英） | Korea Advanced Institute of Science and Technology (略称： KAIST) Korea Advanced Institute of Science and Technology (略称： KAIST) |
| 第2著者 氏名（和/英/ヨミ） | Il Woong Kwon / Il Woong Kwon / |
| 第2著者 所属（和/英） | Korea Advanced Institute of Science and Technology (略称： KAIST) Korea Advanced Institute of Science and Technology (略称： KAIST) |
| 第3著者 氏名（和/英/ヨミ） | Ho Jun You / Ho Jun You / |
| 第3著者 所属（和/英） | Electronics and Telecommunications Research Institute (略称： ETRI) Electronics and Telecommunications Research Institute (略称： ETRI) |
| 第4著者 氏名（和/英/ヨミ） | Yong Soo Lee / Yong Soo Lee / |
| 第4著者 所属（和/英） | Korea Advanced Institute of Science and Technology (略称： KAIST) Korea Advanced Institute of Science and Technology (略称： KAIST) |
| 第5著者 氏名（和/英/ヨミ） | Hee Chul Lee / Hee Chul Lee / |
| 第5著者 所属（和/英） | Korea Advanced Institute of Science and Technology (略称： KAIST) Korea Advanced Institute of Science and Technology (略称： KAIST) |
| 講演者 | 第1著者 |
| 発表日時 | 2008-07-10 10:40:00 |
| 発表時間 | 15分 |
| 申込先研究会 | SDM |
| 資料番号 | ED2008-68, SDM2008-87 |
| 巻番号（vol） | vol.108 |
| 号番号（no） | no.121(ED), no.122(SDM) |
| ページ範囲 | pp.149-154 |
| ページ数 | 6 |
| 発行日 | 2008-07-02 (ED, SDM) |
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