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| 講演名 | 2008-07-11 14:20 AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire ○Tomohiro Murata・Masayuki Kuroda（Matsushita Electric Industrial）・Shuichi Nagai（Panasonic Boston Lab.）・Masaaki Nishijima・Hidetoshi Ishida・Manabu Yanagihara・Tetsuzo Ueda・Hiroyuki Sakai・Tsuyoshi Tanaka（Matsushita Electric Industrial）・Ming Li（Panasonic Boston Lab.）  ED2008-103 SDM2008-122 |
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| 抄録 | （和） | We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice capping layers which successfully reduce series resistance. A typical HFET shows fmax of 161 GHz and NFmin of 2.5 dB at 28 GHz. The first demonstration of GaN based K-band MMIC is 2-stage amplifier with coplanar waveguide transmission line, which exhibits a small signal gain of 13 dB at 21.6 GHz. Further increase of the gain is achieved by 3-stage amplifier MMIC which include microstrip lines with via-holes. The via-holes are fabricated onto chemically stable sapphire by newly proposed laser drilling technique. The compact 3-stage amplifier exhibits a small-signal gain as high as 22 dB at 26 GHz with a 3 dB bandwidth of 4 GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems. |
| （英） | We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice capping layers which successfully reduce series resistance. A typical HFET shows fmax of 161 GHz and NFmin of 2.5 dB at 28 GHz. The first demonstration of GaN based K-band MMIC is 2-stage amplifier with coplanar waveguide transmission line, which exhibits a small signal gain of 13 dB at 21.6 GHz. Further increase of the gain is achieved by 3-stage amplifier MMIC which include microstrip lines with via-holes. The via-holes are fabricated onto chemically stable sapphire by newly proposed laser drilling technique. The compact 3-stage amplifier exhibits a small-signal gain as high as 22 dB at 26 GHz with a 3 dB bandwidth of 4 GHz. The presented K-band MMIC would be applicable to future millimeter-wave communication systems. | |
| キーワード | （和） | AlGaN/GaN heterojunction FET / superlattices / MMIC amplifiers / sapphire / via hole / laser drilling / microstrip line / |
| （英） | AlGaN/GaN heterojunction FET / superlattices / MMIC amplifiers / sapphire / via hole / laser drilling / microstrip line / | |
| 文献情報 | 信学技報, vol. 108, no. 121, ED2008-103, pp. 331-335, 2008年7月. | |
| 資料番号 | ED2008-103 | |
| 発行日 | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| 著作権に ついて |
技術研究報告に掲載された論文の著作権は電子情報通信学会に帰属します．(許諾番号：10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| PDFダウンロード | ED2008-103 SDM2008-122 |
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