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| Presentation | 2008-07-11 15:20 Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi, Kazuaki Imai (Hokkaido Inst. of Tech.)  ED2008-107 SDM2008-126 Link to ES Tech. Rep. Archives: ED2008-107 SDM2008-126 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Electrical properties of bare i-AlGaN/GaN and Ni/i-AlGaN/GaN Schottky samples with various thickness of the AlGaN layer, prepared by wet-etching in a hot-H3PO4, were systematically investigated by Hall effect, I-V and C-V measurements. For the bare samples, the thinner the AlGaN layer, the lower 2DEG density according to the theoretical curve with a constant surface barrier height. For Schottky samples, both forward and reverse currents increase with decreasing the AlGaN layer, and the behavior can be explained by combined leakage currents due to leaky patches and simple tunneling through the barrier. C-V measurements supported fairly uniform etching of the AlGaN layer. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | GaN / AlGaN/GaN Heterostructure / Schottky / Electrical Property / Wet-Etching / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 121, ED2008-107, pp. 351-355, July 2008. | |
| Paper # | ED2008-107 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-107 SDM2008-126 Link to ES Tech. Rep. Archives: ED2008-107 SDM2008-126 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | ED |
| Conference Code | 2008-07-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H3PO4-Etching |
| Sub Title (in English) | |
| Keyword(1) | GaN |
| Keyword(2) | AlGaN/GaN Heterostructure |
| Keyword(3) | Schottky |
| Keyword(4) | Electrical Property |
| Keyword(5) | Wet-Etching |
| Keyword(6) | |
| Keyword(7) | |
| Keyword(8) | |
| 1st Author's Name | Takayuki Sawada |
| 1st Author's Affiliation | Hokkaido Institute of Technology (Hokkaido Inst. of Tech.) |
| 2nd Author's Name | Yuta Kaizuka |
| 2nd Author's Affiliation | Hokkaido Institute of Technology (Hokkaido Inst. of Tech.) |
| 3rd Author's Name | Kensuke Takahashi |
| 3rd Author's Affiliation | Hokkaido Institute of Technology (Hokkaido Inst. of Tech.) |
| 4th Author's Name | Kazuaki Imai |
| 4th Author's Affiliation | Hokkaido Institute of Technology (Hokkaido Inst. of Tech.) |
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| Speaker | Author-1 |
| Date Time | 2008-07-11 15:20:00 |
| Presentation Time | 15 minutes |
| Registration for | ED |
| Paper # | ED2008-107, SDM2008-126 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.351-355 |
| #Pages | 5 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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