Information: Join today and make your research activities more affordable! Technical workshop participation fees and annual registration fees are available at member rates.
Notice: [Important] Announcement of Changes to Registration Fee Payment and Manuscript Upload Procedures for IEICE Technical Meetings
IEICE Technical Committee Submission System
Conference Paper's Information		 Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-07-11 13:50
SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application
Jae-Kwon Kim, Kyunghwan Kim, Jinwook Burn (Sogang Univ.) ED2008-99 SDM2008-118
Abstract (in Japanese) (See Japanese page) 
(in English) Silicon-carbide (SiC) devices have received increased attention for high-power, high-speed, high temperature, and radiation-hard applications due to their superior properties, including wide band-gap, high saturated electron velocity, high breakdown electric field strength, and high thermal conductivity. The high breakdown field allows silicon carbide devices to operate at much higher voltages than silicon (Si) or gallium-arsenide (GaAs) devices and to have significant RF output power at high temperatures. The high thermal conductivity implies that silicon carbide has high-power handling capability. This paper describes the two-stage 5 W broadband power amplifiers using a commercially available silicon carbide Metal Semiconductor Field Effect Transistors (MESFETs), Cree CRF-24010F. The frequency range covers 3.6 GHz to 3.8 GHz for using WiMAX base-station application. The 2nd and 3rd order harmonic cancellation technique was introduced to obtain high linearity. A cascade topology was employed to increase isolation and stability throughout the bandwidth. At VDS = 24 V and IDS = 840 mA (two stage), 10 。セ 1 dB power gain, average 37 dBm (5 W) output power, 24 % power added efficiency have been achieved in the two-stage design. The results are being discussed and compared with simulations.
Keyword (in Japanese) (See Japanese page) 
(in English) Silicon carbide MESFET / WiMAX / Power Amplifier / / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-118, pp. 313-316, July 2008.
Paper # SDM2008-118 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-99 SDM2008-118

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu２・７ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application 
Sub Title (in English)  
Keyword(1) Silicon carbide MESFET  
Keyword(2) WiMAX  
Keyword(3) Power Amplifier  
Keyword(4)  
Keyword(5)  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Jae-Kwon Kim  
1st Author's Affiliation Sogang University (Sogang Univ.)
2nd Author's Name Kyunghwan Kim  
2nd Author's Affiliation Sogang University (Sogang Univ.)
3rd Author's Name Jinwook Burn  
3rd Author's Affiliation Sogang University (Sogang Univ.)
4th Author's Name  
4th Author's Affiliation ()
5th Author's Name  
5th Author's Affiliation ()
6th Author's Name  
6th Author's Affiliation ()
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
21st Author's Name  
21st Author's Affiliation ()
22nd Author's Name  
22nd Author's Affiliation ()
23rd Author's Name  
23rd Author's Affiliation ()
24th Author's Name  
24th Author's Affiliation ()
25th Author's Name  
25th Author's Affiliation ()
26th Author's Name / /
26th Author's Affiliation ()
()
27th Author's Name / /
27th Author's Affiliation ()
()
28th Author's Name / /
28th Author's Affiliation ()
()
29th Author's Name / /
29th Author's Affiliation ()
()
30th Author's Name / /
30th Author's Affiliation ()
()
31st Author's Name / /
31st Author's Affiliation ()
()
32nd Author's Name / /
32nd Author's Affiliation ()
()
33rd Author's Name / /
33rd Author's Affiliation ()
()
34th Author's Name / /
34th Author's Affiliation ()
()
35th Author's Name / /
35th Author's Affiliation ()
()
36th Author's Name / /
36th Author's Affiliation ()
()
Speaker Author-1 
Date Time 2008-07-11 13:50:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-99, SDM2008-118 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.313-316 
#Pages 4 
Date of Issue 2008-07-02 (ED, SDM) 

[Return to Top Page]

[Return to IEICE Web Page]
The Institute of Electronics, Information and Communication Engineers (IEICE), Japan