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| Presentation | 2008-07-11 13:50 SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application Jae-Kwon Kim, Kyunghwan Kim, Jinwook Burn (Sogang Univ.)  ED2008-99 SDM2008-118 Link to ES Tech. Rep. Archives: ED2008-99 SDM2008-118 |
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| Abstract | (in Japanese) | (See Japanese page) |
| (in English) | Silicon-carbide (SiC) devices have received increased attention for high-power, high-speed, high temperature, and radiation-hard applications due to their superior properties, including wide band-gap, high saturated electron velocity, high breakdown electric field strength, and high thermal conductivity. The high breakdown field allows silicon carbide devices to operate at much higher voltages than silicon (Si) or gallium-arsenide (GaAs) devices and to have significant RF output power at high temperatures. The high thermal conductivity implies that silicon carbide has high-power handling capability. This paper describes the two-stage 5 W broadband power amplifiers using a commercially available silicon carbide Metal Semiconductor Field Effect Transistors (MESFETs), Cree CRF-24010F. The frequency range covers 3.6 GHz to 3.8 GHz for using WiMAX base-station application. The 2nd and 3rd order harmonic cancellation technique was introduced to obtain high linearity. A cascade topology was employed to increase isolation and stability throughout the bandwidth. At VDS = 24 V and IDS = 840 mA (two stage), 10 。セ 1 dB power gain, average 37 dBm (5 W) output power, 24 % power added efficiency have been achieved in the two-stage design. The results are being discussed and compared with simulations. | |
| Keyword | (in Japanese) | (See Japanese page) |
| (in English) | Silicon carbide MESFET / WiMAX / Power Amplifier / / / / / | |
| Reference Info. | IEICE Tech. Rep., vol. 108, no. 122, SDM2008-118, pp. 313-316, July 2008. | |
| Paper # | SDM2008-118 | |
| Date of Issue | 2008-07-02 (ED, SDM) | |
| ISSN | Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 | |
| Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) | |
| Download PDF | ED2008-99 SDM2008-118 Link to ES Tech. Rep. Archives: ED2008-99 SDM2008-118 |
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| Conference Information | |
| Committee | SDM ED |
| Conference Date | 2008-07-09 - 2008-07-11 |
| Place (in Japanese) | (See Japanese page) |
| Place (in English) | Kaderu２・７ |
| Topics (in Japanese) | (See Japanese page) |
| Topics (in English) | 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
| Paper Information | |
| Registration To | SDM |
| Conference Code | 2008-07-SDM-ED |
| Language | English |
| Title (in Japanese) | (See Japanese page) |
| Sub Title (in Japanese) | (See Japanese page) |
| Title (in English) | SiC MESFET Power Amplifier for 3.6 GHz-3.8 GHz WiMAX Application |
| Sub Title (in English) | |
| Keyword(1) | Silicon carbide MESFET |
| Keyword(2) | WiMAX |
| Keyword(3) | Power Amplifier |
| Keyword(4) | |
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| 1st Author's Name | Jae-Kwon Kim |
| 1st Author's Affiliation | Sogang University (Sogang Univ.) |
| 2nd Author's Name | Kyunghwan Kim |
| 2nd Author's Affiliation | Sogang University (Sogang Univ.) |
| 3rd Author's Name | Jinwook Burn |
| 3rd Author's Affiliation | Sogang University (Sogang Univ.) |
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| Speaker | Author-1 |
| Date Time | 2008-07-11 13:50:00 |
| Presentation Time | 15 minutes |
| Registration for | SDM |
| Paper # | ED2008-99, SDM2008-118 |
| Volume (vol) | vol.108 |
| Number (no) | no.121(ED), no.122(SDM) |
| Page | pp.313-316 |
| #Pages | 4 |
| Date of Issue | 2008-07-02 (ED, SDM) |
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