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Paper Abstract and Keywords
Presentation 2008-07-11 14:50
AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD
Hideyuki Okita, Shinichi Hoshi, Toshiharu Marui, Masanori Itoh, Fumihiko Toda, Yoshiaki Morino, Isao Tamai, Yoshiaki Sano, Shohei Seki (OKI Electric Industry) ED2008-105 SDM2008-124
Abstract (in Japanese) (See Japanese page) 
(in English) Current collapse phenomenon is a big obstacle in the AlGaN/GaN high electron mobility transistors (HEMTs), since they have a strong relativity to high efficiency operation in RF power characteristics. To solve this problem, we investigated the SiN deposited by thermal chemical vapor deposition (T-CVD) for AlGaN/GaN-HEMTs passivation film, and DC and RF characteristics were compared with those of conventional AlGaN/GaN-HEMTs with plasma enhanced chemical vapor deposition (PE-CVD) SiN passivation film. We found out that T-CVD SiN passivation film improves three-terminal off-state breakdown voltage (BVds-off) by 30 % because of the reduction of gate leakage current. In the load-pull power measurement, drain efficiency (n d) was also improved which indicates the decrease of the current collapse phenomenon. Finally we fabricated a multi-fingered 50 W-class AlGaN/GaN-HEMT with T-CVD SiN passivation film and achieved 61.2 % of high drain efficiency at frequency of 2.14 GHz, which was 3 points higher than those with PE-CVD SiN passivation film.
Keyword (in Japanese) (See Japanese page) 
(in English) AlGaN/GaN-HEMTs / Current collapse / SiN / Passivation film / Thermal CVD / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 122, SDM2008-124, pp. 341-345, July 2008.
Paper # SDM2008-124 
Date of Issue 2008-07-02 (ED, SDM) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction		 All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-105 SDM2008-124

Conference Information
Committee SDM ED  
Conference Date 2008-07-09 - 2008-07-11 
Place (in Japanese) (See Japanese page) 
Place (in English) Kaderu２・７ 
Topics (in Japanese) (See Japanese page) 
Topics (in English) 2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices 
Paper Information
Registration To SDM 
Conference Code 2008-07-SDM-ED 
Language English (Japanese title is available) 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) AlGaN/GaN-HEMTs on SiC with SiN Passivation Film Grown by Thermal CVD 
Sub Title (in English)  
Keyword(1) AlGaN/GaN-HEMTs  
Keyword(2) Current collapse  
Keyword(3) SiN  
Keyword(4) Passivation film  
Keyword(5) Thermal CVD  
Keyword(6)  
Keyword(7)  
Keyword(8)  
1st Author's Name Hideyuki Okita  
1st Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
2nd Author's Name Shinichi Hoshi  
2nd Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
3rd Author's Name Toshiharu Marui  
3rd Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
4th Author's Name Masanori Itoh  
4th Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
5th Author's Name Fumihiko Toda  
5th Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
6th Author's Name Yoshiaki Morino  
6th Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
7th Author's Name Isao Tamai  
7th Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
8th Author's Name Yoshiaki Sano  
8th Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
9th Author's Name Shohei Seki  
9th Author's Affiliation Oki Electric Industry Co., Ltd Research & Development Center (OKI Electric Industry)
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Speaker Author-1 
Date Time 2008-07-11 14:50:00 
Presentation Time 15 minutes 
Registration for SDM 
Paper # ED2008-105, SDM2008-124 
Volume (vol) vol.108 
Number (no) no.121(ED), no.122(SDM) 
Page pp.341-345 
#Pages 5 
Date of Issue 2008-07-02 (ED, SDM) 

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