Paper Abstract and Keywords |
Presentation |
2008-07-11 09:25
[Invited Talk]
Recent Advances on GaN Vertical Power Device Tetsu Kachi (Toyota Central R&D Labs., Inc.) ED2008-72 SDM2008-91 Link to ES Tech. Rep. Archives: ED2008-72 SDM2008-91 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
Two types of the vertical device structure have been developed for GaN power devices. One is similar to DMOSFET, which has AlGaN/GaN channel. The other is trench gate MOSFET fabricated by novel wet etching technology. Both devices have shown good performances though the performances were yet far from the expected potential. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
GaN / Power device / Vertical device / AlGaN/GaN HFET / UMOSFET / Enhancement mode / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 121, ED2008-72, pp. 171-175, July 2008. |
Paper # |
ED2008-72 |
Date of Issue |
2008-07-02 (ED, SDM) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-72 SDM2008-91 Link to ES Tech. Rep. Archives: ED2008-72 SDM2008-91 |
Conference Information |
Committee |
SDM ED |
Conference Date |
2008-07-09 - 2008-07-11 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kaderu2・7 |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
2008 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices |
Paper Information |
Registration To |
ED |
Conference Code |
2008-07-SDM-ED |
Language |
English |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Recent Advances on GaN Vertical Power Device |
Sub Title (in English) |
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Keyword(1) |
GaN |
Keyword(2) |
Power device |
Keyword(3) |
Vertical device |
Keyword(4) |
AlGaN/GaN HFET |
Keyword(5) |
UMOSFET |
Keyword(6) |
Enhancement mode |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Tetsu Kachi |
1st Author's Affiliation |
Toyota Central Reseach & Development Labratories Inc. (Toyota Central R&D Labs., Inc.) |
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Speaker |
Author-1 |
Date Time |
2008-07-11 09:25:00 |
Presentation Time |
25 minutes |
Registration for |
ED |
Paper # |
ED2008-72, SDM2008-91 |
Volume (vol) |
vol.108 |
Number (no) |
no.121(ED), no.122(SDM) |
Page |
pp.171-175 |
#Pages |
5 |
Date of Issue |
2008-07-02 (ED, SDM) |
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