IEICE Technical Committee Submission System
Conference Paper's Information
Online Proceedings
[Sign in]
Tech. Rep. Archives
 Go Top Page Go Previous   [Japanese] / [English] 

Paper Abstract and Keywords
Presentation 2008-07-17 14:00
[Special Talk] Present Status and Future Trend of Characteristic Variations in Scaled CMOS
Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 Link to ES Tech. Rep. Archives: SDM2008-135 ICD2008-45
Abstract (in Japanese) (See Japanese page) 
(in English) The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variability may place the limit of MOS transistor scaling, the origins of characteristics variation of MOS transistors have not been fully understood. Intensive and extensive investigations have been performed in order to elucidate the origins of random variation in scaled MOSFETs in framework of the MIRAI Project. The main achievements are: (1) Designed 1M device-matrix-array TEG and found that VTH distributions of both nFETs and pFETs show high normality in the range of ±5σ, (2) Developed a new normalization method of Vth fluctuations in terms not only of device size but also of VTH and TINV (Takeuchi Plot), and (3) Compared the Vth fluctuation data in different technologies and fabs using Takeuchi Plot and found that pFET fluctuations can be almost fully explained by discrete dopant fluctuations while nFET has some fluctuation mechanisms other than dopant fluctuations.
Keyword (in Japanese) (See Japanese page) 
(in English) MOSFET / Variability / Threshold voltage / Random dopant fluctuation / Pelgrom plot / Takeuchi plot / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 139, SDM2008-135, pp. 41-46, July 2008.
Paper # SDM2008-135 
Date of Issue 2008-07-10 (SDM, ICD) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
and
reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF SDM2008-135 ICD2008-45 Link to ES Tech. Rep. Archives: SDM2008-135 ICD2008-45

Conference Information
Committee ICD SDM  
Conference Date 2008-07-17 - 2008-07-18 
Place (in Japanese) (See Japanese page) 
Place (in English) Kikai-Shinko-Kaikan Bldg. 
Topics (in Japanese) (See Japanese page) 
Topics (in English)  
Paper Information
Registration To SDM 
Conference Code 2008-07-ICD-SDM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Present Status and Future Trend of Characteristic Variations in Scaled CMOS 
Sub Title (in English)  
Keyword(1) MOSFET  
Keyword(2) Variability  
Keyword(3) Threshold voltage  
Keyword(4) Random dopant fluctuation  
Keyword(5) Pelgrom plot  
Keyword(6) Takeuchi plot  
Keyword(7)  
Keyword(8)  
1st Author's Name Toshiro Hiramoto  
1st Author's Affiliation University of Tokyo (Univ. of Tokyo/MIRAI-Selete)
2nd Author's Name Kiyoshi Takeuchi  
2nd Author's Affiliation /MIRAI-Selete (/MIRAI-Selete)
3rd Author's Name Takaaki Tsunomura  
3rd Author's Affiliation /MIRAI-Selete (/MIRAI-Selete)
4th Author's Name Arifin T.Putra  
4th Author's Affiliation University of Tokyo (Univ. of Tokyo)
5th Author's Name Akio Nishida  
5th Author's Affiliation /MIRAI-Selete (/MIRAI-Selete)
6th Author's Name Shiro Kamohara  
6th Author's Affiliation /MIRAI-Selete (/MIRAI-Selete)
7th Author's Name  
7th Author's Affiliation ()
8th Author's Name  
8th Author's Affiliation ()
9th Author's Name  
9th Author's Affiliation ()
10th Author's Name  
10th Author's Affiliation ()
11th Author's Name  
11th Author's Affiliation ()
12th Author's Name  
12th Author's Affiliation ()
13th Author's Name  
13th Author's Affiliation ()
14th Author's Name  
14th Author's Affiliation ()
15th Author's Name  
15th Author's Affiliation ()
16th Author's Name  
16th Author's Affiliation ()
17th Author's Name  
17th Author's Affiliation ()
18th Author's Name  
18th Author's Affiliation ()
19th Author's Name  
19th Author's Affiliation ()
20th Author's Name  
20th Author's Affiliation ()
Speaker Author-1 
Date Time 2008-07-17 14:00:00 
Presentation Time 50 minutes 
Registration for SDM 
Paper # SDM2008-135, ICD2008-45 
Volume (vol) vol.108 
Number (no) no.139(SDM), no.140(ICD) 
Page pp.41-46 
#Pages
Date of Issue 2008-07-10 (SDM, ICD) 


[Return to Top Page]

[Return to IEICE Web Page]


The Institute of Electronics, Information and Communication Engineers (IEICE), Japan