Paper Abstract and Keywords |
Presentation |
2008-07-17 14:00
[Special Talk]
Present Status and Future Trend of Characteristic Variations in Scaled CMOS Toshiro Hiramoto (Univ. of Tokyo/MIRAI-Selete), Kiyoshi Takeuchi, Takaaki Tsunomura (/MIRAI-Selete), Arifin T.Putra (Univ. of Tokyo), Akio Nishida, Shiro Kamohara (/MIRAI-Selete) SDM2008-135 ICD2008-45 Link to ES Tech. Rep. Archives: SDM2008-135 ICD2008-45 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
The variability is one of the most critical issues for further miniaturization of MOS transistors. Although the variability may place the limit of MOS transistor scaling, the origins of characteristics variation of MOS transistors have not been fully understood. Intensive and extensive investigations have been performed in order to elucidate the origins of random variation in scaled MOSFETs in framework of the MIRAI Project. The main achievements are: (1) Designed 1M device-matrix-array TEG and found that VTH distributions of both nFETs and pFETs show high normality in the range of ±5σ, (2) Developed a new normalization method of Vth fluctuations in terms not only of device size but also of VTH and TINV (Takeuchi Plot), and (3) Compared the Vth fluctuation data in different technologies and fabs using Takeuchi Plot and found that pFET fluctuations can be almost fully explained by discrete dopant fluctuations while nFET has some fluctuation mechanisms other than dopant fluctuations. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
MOSFET / Variability / Threshold voltage / Random dopant fluctuation / Pelgrom plot / Takeuchi plot / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 139, SDM2008-135, pp. 41-46, July 2008. |
Paper # |
SDM2008-135 |
Date of Issue |
2008-07-10 (SDM, ICD) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
SDM2008-135 ICD2008-45 Link to ES Tech. Rep. Archives: SDM2008-135 ICD2008-45 |
Conference Information |
Committee |
ICD SDM |
Conference Date |
2008-07-17 - 2008-07-18 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Kikai-Shinko-Kaikan Bldg. |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
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Paper Information |
Registration To |
SDM |
Conference Code |
2008-07-ICD-SDM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Present Status and Future Trend of Characteristic Variations in Scaled CMOS |
Sub Title (in English) |
|
Keyword(1) |
MOSFET |
Keyword(2) |
Variability |
Keyword(3) |
Threshold voltage |
Keyword(4) |
Random dopant fluctuation |
Keyword(5) |
Pelgrom plot |
Keyword(6) |
Takeuchi plot |
Keyword(7) |
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Keyword(8) |
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1st Author's Name |
Toshiro Hiramoto |
1st Author's Affiliation |
University of Tokyo (Univ. of Tokyo/MIRAI-Selete) |
2nd Author's Name |
Kiyoshi Takeuchi |
2nd Author's Affiliation |
/MIRAI-Selete (/MIRAI-Selete) |
3rd Author's Name |
Takaaki Tsunomura |
3rd Author's Affiliation |
/MIRAI-Selete (/MIRAI-Selete) |
4th Author's Name |
Arifin T.Putra |
4th Author's Affiliation |
University of Tokyo (Univ. of Tokyo) |
5th Author's Name |
Akio Nishida |
5th Author's Affiliation |
/MIRAI-Selete (/MIRAI-Selete) |
6th Author's Name |
Shiro Kamohara |
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/MIRAI-Selete (/MIRAI-Selete) |
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Speaker |
Author-1 |
Date Time |
2008-07-17 14:00:00 |
Presentation Time |
50 minutes |
Registration for |
SDM |
Paper # |
SDM2008-135, ICD2008-45 |
Volume (vol) |
vol.108 |
Number (no) |
no.139(SDM), no.140(ICD) |
Page |
pp.41-46 |
#Pages |
6 |
Date of Issue |
2008-07-10 (SDM, ICD) |
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