Paper Abstract and Keywords |
Presentation |
2008-11-27 15:50
Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.) ED2008-164 CPM2008-113 LQE2008-108 Link to ES Tech. Rep. Archives: ED2008-164 CPM2008-113 LQE2008-108 |
Abstract |
(in Japanese) |
(See Japanese page) |
(in English) |
We demonstrate that the apparent emission colors of InGaN-based LEDs using micro-structured multifacet quantum wells as active layers can externally be controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000 K to blue along the Planckian locus. The controllability relies on facet-dependent polychromatic emissions. The pulsed current operation with the appropriate duties varied their relative intensities and the consequent apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to green variation. The proposed LEDs can be fabricated through a simple process and, therefore, may be a key device for advanced SSL. |
Keyword |
(in Japanese) |
(See Japanese page) |
(in English) |
InGaN/GaN quantum wells / multi-facetted structure / LEDs / color-tunable LEDs / / / / |
Reference Info. |
IEICE Tech. Rep., vol. 108, no. 323, LQE2008-108, pp. 57-60, Nov. 2008. |
Paper # |
LQE2008-108 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
ISSN |
Print edition: ISSN 0913-5685 Online edition: ISSN 2432-6380 |
Copyright and reproduction |
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034) |
Download PDF |
ED2008-164 CPM2008-113 LQE2008-108 Link to ES Tech. Rep. Archives: ED2008-164 CPM2008-113 LQE2008-108 |
Conference Information |
Committee |
LQE ED CPM |
Conference Date |
2008-11-27 - 2008-11-28 |
Place (in Japanese) |
(See Japanese page) |
Place (in English) |
Nagoya Institute of Technology |
Topics (in Japanese) |
(See Japanese page) |
Topics (in English) |
Nitride Based Optical and Electronic Devices, Materials and Related Technologies |
Paper Information |
Registration To |
LQE |
Conference Code |
2008-11-LQE-ED-CPM |
Language |
Japanese |
Title (in Japanese) |
(See Japanese page) |
Sub Title (in Japanese) |
(See Japanese page) |
Title (in English) |
Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells |
Sub Title (in English) |
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Keyword(1) |
InGaN/GaN quantum wells |
Keyword(2) |
multi-facetted structure |
Keyword(3) |
LEDs |
Keyword(4) |
color-tunable LEDs |
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1st Author's Name |
Mitsuru Funato |
1st Author's Affiliation |
Kyoto University (Kyoto Univ.) |
2nd Author's Name |
Keita Hayashi |
2nd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
3rd Author's Name |
Masaya Ueda |
3rd Author's Affiliation |
Kyoto University (Kyoto Univ.) |
4th Author's Name |
Yoichi Kawakami |
4th Author's Affiliation |
Kyoto University (Kyoto Univ.) |
5th Author's Name |
Yukio Narukawa |
5th Author's Affiliation |
Nichia Corporation (Nichia Corp.) |
6th Author's Name |
Takashi Mukai |
6th Author's Affiliation |
Nichia Corporation (Nichia Corp.) |
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Speaker |
Author-1 |
Date Time |
2008-11-27 15:50:00 |
Presentation Time |
25 minutes |
Registration for |
LQE |
Paper # |
ED2008-164, CPM2008-113, LQE2008-108 |
Volume (vol) |
vol.108 |
Number (no) |
no.321(ED), no.322(CPM), no.323(LQE) |
Page |
pp.57-60 |
#Pages |
4 |
Date of Issue |
2008-11-20 (ED, CPM, LQE) |
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