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Paper Abstract and Keywords
Presentation 2008-11-27 15:50
Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells
Mitsuru Funato, Keita Hayashi, Masaya Ueda, Yoichi Kawakami (Kyoto Univ.), Yukio Narukawa, Takashi Mukai (Nichia Corp.) ED2008-164 CPM2008-113 LQE2008-108 Link to ES Tech. Rep. Archives: ED2008-164 CPM2008-113 LQE2008-108
Abstract (in Japanese) (See Japanese page) 
(in English) We demonstrate that the apparent emission colors of InGaN-based LEDs using micro-structured multifacet quantum wells as active layers can externally be controlled over a wide spectral range that encompasses green to blue or white at a color temperature of 4000 K to blue along the Planckian locus. The controllability relies on facet-dependent polychromatic emissions. The pulsed current operation with the appropriate duties varied their relative intensities and the consequent apparent colors without seriously affecting the total number of emitted photons, particularly for the blue to green variation. The proposed LEDs can be fabricated through a simple process and, therefore, may be a key device for advanced SSL.
Keyword (in Japanese) (See Japanese page) 
(in English) InGaN/GaN quantum wells / multi-facetted structure / LEDs / color-tunable LEDs / / / /  
Reference Info. IEICE Tech. Rep., vol. 108, no. 323, LQE2008-108, pp. 57-60, Nov. 2008.
Paper # LQE2008-108 
Date of Issue 2008-11-20 (ED, CPM, LQE) 
ISSN Print edition: ISSN 0913-5685    Online edition: ISSN 2432-6380
Copyright
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reproduction
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
Download PDF ED2008-164 CPM2008-113 LQE2008-108 Link to ES Tech. Rep. Archives: ED2008-164 CPM2008-113 LQE2008-108

Conference Information
Committee LQE ED CPM  
Conference Date 2008-11-27 - 2008-11-28 
Place (in Japanese) (See Japanese page) 
Place (in English) Nagoya Institute of Technology 
Topics (in Japanese) (See Japanese page) 
Topics (in English) Nitride Based Optical and Electronic Devices, Materials and Related Technologies 
Paper Information
Registration To LQE 
Conference Code 2008-11-LQE-ED-CPM 
Language Japanese 
Title (in Japanese) (See Japanese page) 
Sub Title (in Japanese) (See Japanese page) 
Title (in English) Emission color tunable light-emitting diodes based on multi-facetted InGaN/GaN quantum wells 
Sub Title (in English)  
Keyword(1) InGaN/GaN quantum wells  
Keyword(2) multi-facetted structure  
Keyword(3) LEDs  
Keyword(4) color-tunable LEDs  
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1st Author's Name Mitsuru Funato  
1st Author's Affiliation Kyoto University (Kyoto Univ.)
2nd Author's Name Keita Hayashi  
2nd Author's Affiliation Kyoto University (Kyoto Univ.)
3rd Author's Name Masaya Ueda  
3rd Author's Affiliation Kyoto University (Kyoto Univ.)
4th Author's Name Yoichi Kawakami  
4th Author's Affiliation Kyoto University (Kyoto Univ.)
5th Author's Name Yukio Narukawa  
5th Author's Affiliation Nichia Corporation (Nichia Corp.)
6th Author's Name Takashi Mukai  
6th Author's Affiliation Nichia Corporation (Nichia Corp.)
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Speaker Author-1 
Date Time 2008-11-27 15:50:00 
Presentation Time 25 minutes 
Registration for LQE 
Paper # ED2008-164, CPM2008-113, LQE2008-108 
Volume (vol) vol.108 
Number (no) no.321(ED), no.322(CPM), no.323(LQE) 
Page pp.57-60 
#Pages
Date of Issue 2008-11-20 (ED, CPM, LQE) 


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